Programmable magnetic tunnel junction
The present disclosure relates to semiconductor structures and, more particularly, to temperature sensors with programmable magnetic tunnel junction structures and methods of manufacture. A structure includes a resistor material connected in series with a programmable magnetic tunnel junction structure in a Wheatstone bridge configuration.
1. A structure comprising diffusion regions of resistor material connected in series with programmable magnetic tunnel junction structures in a Wheatstone bridge configuration.
2. The structure of claim 1 , wherein the resistor material comprises semiconductor material comprising a negative or flat temperature dependency and the magnetic tunnel junction structures comprise a positive temperature dependency.
3. The structure of claim 2 , wherein the resistor material comprises an N+ diffusion region of a substrate material.
4. The structure of claim 3 , further comprising a shallow trench isolation structure which isolates the N+ diffusion region from the substrate material.
5. A structure comprising resistor material connected in series with programmable magnetic tunnel junction structures in a Wheatstone bridge configuration, wherein the resistor material comprises polysilicon material, which comprises a negative or flat temperature dependency and the magnetic tunnel junction structures comprise a positive temperature dependency.
6. The structure of claim 2 , wherein the Wheatstone bridge configuration comprises the resistor material of a first diffusion region of the diffusion regions connected in series to a first programmable magnetic tunnel junction structure and Vout, and the resistor material of a second diffusion region of the diffusion regions connected in series to a second programmable magnetic tunnel junction structure and Vout.
7. The structure of claim 1 , wherein the magnetic tunnel junction structures comprises perpendicular magnetic tunnel junctions.
8. The structure of claim 2 , further comprising a ground line connecting to the resistor material, in series.
9. The structure of claim 8 , further comprising Vdd and Vout connecting to the magnetic tunnel junction structures in series.
10. The structure of claim 1 , further comprising an active device connected to the magnetic tunnel junction structures.
11. The structure of claim 10 , wherein a drain region of the active device connects to a first magnetic tunnel junction structure of the magnetic tunnel junction structures, and further comprising Vdd and Vout connecting to a second magnetic tunnel junction structure of the magnetic tunnel junction structures in series.
12. The structure of claim 1 , wherein the magnetic tunnel junction structures are programmable into a high resistance state.
13. A structure comprising:
a substrate material;
a resistor material contacting the substrate material;
a programmable magnetic tunnel junction structure connected to the resistor material in series; and
a ground line connected to the resistor material in series, wherein the resistor material comprises one of N+ diffusion region of the substrate material and polysilicon material landing over the substrate material.
14. The structure of claim 13 , wherein the programmable magnetic tunnel junction structure comprises a perpendicular programmable tunnel junction structure.
15. The structure of claim 13 , wherein the programmable magnetic tunnel junction structure is connected in series between Vdd and Vout and is provided in a Wheatstone configuration with the resistor material.
16. A structure comprising:
a substrate material;
a resistor material contacting the substrate material;
a programmable magnetic tunnel junction structure connected to the resistor material in series;
a ground line connected to the resistor material in series; and
a transistor comprising a drain region connecting in series to the programmable magnetic tunnel junction structure and a source region connecting in series to a signal line.
17. A method comprising:
reading a voltage output of a first side of a Wheatstone bridge which is proportional to a diffusion region having a negative temperature dependence;
reading a voltage output of a second side of the Wheatstone bridge which is proportional to a programmable tunnel junction structure having a positive temperature dependence;
comparing the voltage output of the first side to the voltage output of the second side to determine a voltage differential; and
correlating the voltage differential to a temperature reading,
wherein the diffusion region comprises resistor material connected in series with a programmable magnetic tunnel junction structure comprising a first and second programmable magnetic tunnel junction in a Wheatstone bridge configuration.
18. The method of claim 17 , wherein
V out left= Vdd*Rn −diff/( Rn −diff+ Rmtj );
V out right= Vdd*Rmtj /( Rn+Rmtj ), where
Rn−diff is a resistance of an N+ diffusion region and Rmtj is a resistance of the programmable tunnel junction structure.