Quantum dot LED design based on resonant energy transfer
Embodiments of the present application relate to illumination devices using luminescent nanostructures. An illumination device includes a first conductive layer, a second conductive layer, a hole transport layer, an electron transport layer and a material layer that includes a plurality of luminescent nanostructures. The hole transport layer and the electron transport layer are each disposed between the first conductive layer and the second conductive layer. The material layer is disposed between the hole transport layer and the electron transport layer and includes one or more discontinuities in its thickness such that the hole transport layer and the electron transport layer contact each other at the one or more discontinuities. Resonant energy transfer occurs between the luminescent nanostructures and excitons at the discontinuities.
1. A method of forming an illumination device, the method comprising:
disposing a first material over a conductive substrate to form a first material layer, wherein the first material layer is configured as one of a hole transport layer or an electron transport layer;
disposing a layer of luminescent nanostructures over the first material layer, wherein the layer of luminescent nanostructures comprises a plurality of luminescent nanostructures suspended in a polymer layer, wherein the layer of luminescent nanostructures comprises a plurality of discontinuities through a thickness of the layer of luminescent nanostructures, and wherein the plurality of discontinuities is randomly spread over the first material layer;
disposing a second material over the layer of luminescent nanostructures to form a second material layer, wherein the second material is configured as another of the electron transport layer or the hole transport layer, wherein the second material layer directly contacts the first material layer at planar interfaces disposed at the plurality of discontinuities of the layer of luminescent nanostructures, and wherein the planar interfaces are coplanar with a planar bottom surface of the layer of plurality of luminescent nano structures; and
disposing a conductive material over the second material layer.
2. The method of claim 1 , wherein disposing the layer of luminescent nanostructures comprises disposing a layer of quantum dots suspended in the polymer layer.
3. The method of claim 1 , wherein disposing the layer of luminescent nanostructures comprises disposing the layer of luminescent nanostructures using spin-coating.
4. The method of claim 1 , wherein disposing the second material comprises disposing a plurality of ZnMgO nanoparticles.
5. The method of claim 1 , wherein disposing the conductive material comprises disposing indium tin oxide (ITO).
6. The method of claim 1 , further comprising disposing an encapsulating material comprising an epoxy resin on the conductive material.
7. The method of claim 1 , further comprising disposing a hole injection layer on the conductive substrate prior to disposing the first material.