IP Library Granted Patent US 12,315,567
Granted Patent B2
US 12,315,567 · App. 17/475,880 · Granted May 27, 2025

Grouped global wordline driver with shared bias scheme

Inventors: Chang Wan Ha (San Ramon, CA); Binh Ngo (Folsom, CA); Ahsanur Rahman (Folsom, CA); Radhika Chinnammagari (Folsom, CA); Sagar Upadhyay (Folsom, CA)
Assignee: Intel NDTM US LLC
G11C16/08G11C16/0483
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Quick Facts
Patent No.
US 12,315,567
App. No.
17/475,880
Granted
May 27, 2025
Kind
B2
Abstract

Systems, apparatuses, and methods may provide for technology that groups a plurality of wordline drivers together and supports these grouped wordline drivers via a shared multiplexer, a shared level shifter, and/or one or more shared multi-well level shifters. In one example, such technology includes a shared multiplexer and a first and second grouped global wordline driver coupled to the shared multiplexer. The shared multiplexer is to access data state information from a plurality of memory cells. The first grouped global wordline driver is to output a first plurality of wordlines associated with a first plane. The second grouped global wordline driver is to output a second plurality of wordlines associated with a second plane, where the second plane is different than the first plane.

Claims (42)

1. A memory device comprising:

a shared multiplexer to access data state information from a plurality of memory cells;

a first grouped global wordline driver coupled to the shared multiplexer to output a first plurality of wordlines associated with a first plane; and

a second grouped global wordline driver coupled to the shared multiplexer to output a second plurality of wordlines associated with a second plane, wherein the second plane is different than the first plane.

2. The memory device of claim 1 , wherein the first grouped global wordline driver comprises a first shared level shifter, wherein the first shared level shifter is to drive a first plurality of pass gates, wherein the second grouped global wordline driver comprises a second shared level shifter, and wherein the second shared level shifter is to drive a second plurality of pass gates.

3. The memory device of claim 2 , wherein the shared multiplexer comprises:

a plurality of level shifters;

a first plurality of multi-well level shifters coupled to an output of the plurality of level shifters, wherein the first plurality of multi-well level shifters is to generate a first decoded data state of the shared multiplexer associated with the first plane; and

a second plurality of multi-well level shifters coupled to the output of the plurality of level shifters, wherein the second plurality of multi-well level shifters is to generate a second decoded data state of the shared multiplexer associated with the second plane.

4. The memory device of claim 3 , wherein the first and second plurality of multi-well level shifters comprise triple well level shifters.

5. The memory device of claim 3 , wherein the shared multiplexer is limited to five of the plurality of level shifters.

6. The memory device of claim 3 , wherein the first grouped global wordline driver is coupled to an output of the first plurality of multi-well level shifters from the shared multiplexer, and wherein the second grouped global wordline driver is coupled to an output of the second plurality of multi-well level shifters from the shared multiplexer.

7. The memory device of claim 6 , wherein the first grouped global wordline driver further comprises:

a first shared multi-well level shifter to drive a first plurality of multi-well pass gates, wherein the first shared multi-well level shifter is to receive the first decoded data state of the shared multiplexer associated with the first plane; and

a second shared multi-well level shifter to drive a second plurality of multi-well pass gates, wherein the second shared multi-well level shifter is to receive a first pass gate voltage associated with the first plane,

wherein the first shared level shifter is coupled to the first and second shared multi-well level shifters.

8. The memory device of claim 7 , wherein the second grouped global wordline driver further comprises:

a third shared multi-well level shifter to drive a third plurality of multi-well pass gates, wherein the third shared multi-well level shifter is to receive the second decoded data state of the shared multiplexer associated with the second plane; and

a fourth shared multi-well level shifter to drive a fourth plurality of multi-well pass gates, wherein the fourth shared multi-well level shifter is to receive a second pass gate voltage associated with the second plane,

wherein the second shared level shifter is coupled to the third and fourth shared multi-well level shifters.

9. A system comprising:

a memory controller; and

a multi-deck non-volatile memory structure coupled to the memory controller, the multi-deck non-volatile memory structure comprising a plurality of decks, at least one of the plurality of decks comprising:

a shared multiplexer to access data state information from a plurality of memory cells;

a first grouped global wordline driver coupled to the shared multiplexer to output a first plurality of wordlines associated with a first plane; and

a second grouped global wordline driver coupled to the shared multiplexer to output a second plurality of wordlines associated with a second plane, wherein the second plane is different than the first plane.

10. The system of claim 9 , wherein the first grouped global wordline driver comprises a first shared level shifter, wherein the first shared level shifter is to drive a first plurality of pass gates, wherein the second grouped global wordline driver comprises a second shared level shifter, and wherein the second shared level shifter is to drive a second plurality of pass gates.

11. The system of claim 10 , wherein the shared multiplexer comprises:

a plurality of level shifters;

a first plurality of multi-well level shifters coupled to an output of the plurality of level shifters, wherein the first plurality of multi-well level shifters is to generate a first decoded data state of the shared multiplexer associated with the first plane; and

a second plurality of multi-well level shifters coupled to the output of the plurality of level shifters, wherein the second plurality of multi-well level shifters is to generate a second decoded data state of the shared multiplexer associated with the second plane.

12. The system of claim 11 , wherein the first and second plurality of multi-well level shifters comprise triple well level shifters.

13. The system of claim 11 , wherein the shared multiplexer is limited to five of the plurality of level shifters.

14. The system of claim 11 , wherein the first grouped global wordline driver is coupled to an output of the first plurality of multi-well level shifters from the shared multiplexer, and wherein the second grouped global wordline driver is coupled to an output of the second plurality of multi-well level shifters from the shared multiplexer.

15. The system of claim 14 , wherein the first grouped global wordline driver further comprises:

a first shared multi-well level shifter to drive a first plurality of multi-well pass gates, wherein the first shared multi-well level shifter is to receive the first decoded data state of the shared multiplexer associated with the first plane; and

a second shared multi-well level shifter to drive a second plurality of multi-well pass gates, wherein the second shared multi-well level shifter is to receive a first pass gate voltage associated with the first plane,

wherein the first shared level shifter is coupled to the first and second shared multi-well level shifters.

16. The system of claim 15 , wherein the second grouped global wordline driver further comprises:

a third shared multi-well level shifter to drive a third plurality of multi-well pass gates, wherein the third shared multi-well level shifter is to receive the second decoded data state of the shared multiplexer associated with the second plane; and

a fourth shared multi-well level shifter to drive a fourth plurality of multi-well pass gates, wherein the fourth shared multi-well level shifter is to receive a second pass gate voltage associated with the second plane,

wherein the second shared level shifter is coupled to the third and fourth shared multi-well level shifters.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 2, 2024
From: INTEL CORPORATION
To: INTEL NDTM US LLC
Reel/Frame 067305/0491 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 6, 2022
From: HA, CHANG WAN; NGO, BINH; RAHMAN, AHSANUR; CHINNAMMAGARI, RADHIKA; UPADHYAY, SAGAR
To: INTEL CORPORATION
Reel/Frame 058564/0775 →