Hybrid bonding structures, semiconductor devices having the same, and methods of manufacturing the semiconductor devices
Provided are a hybrid bonding structure, a solder paste composition, a semiconductor device, and a method of manufacturing the semiconductor device. The hybrid bonding structure includes a solder ball and a solder paste bonded to the solder ball. The solder paste includes a transient liquid phase. The transient liquid phase includes a core and a shell on a surface of the core. A melting point of the shell may be lower than a melting point of the core. The core and the shell are configured to form an intermetallic compound in response to the transient liquid phase at least partially being at a temperature that is within a temperature range of about 20° C. to about 190° C.
1. A hybrid bonding structure, comprising:
a solder ball; and
a solder paste bonded to the solder ball,
wherein the solder paste includes a mixture of a transient liquid phase and a flux,
wherein the transient liquid phase includes a core and a shell on a surface of the core,
wherein a melting point of the shell is lower than a melting point of the core,
wherein the core and the shell are configured to form an intermetallic compound in response to the transient liquid phase at least partially being at a temperature that is within a temperature range of about 20° C. to about 190° C.
2. The hybrid bonding structure of claim 1 , wherein the core includes at least one of tin (Sn), silver (Ag), copper (Cu), indium (In), aluminum (Al), zinc (Zn), bismuth (Bi), nickel (Ni), or iron (Fe).
3. The hybrid bonding structure of claim 1 , wherein the shell includes at least one of bismuth (Bi), indium (In), gallium (Ga), or silver (Ag).
4. The hybrid bonding structure of claim 1 , wherein the solder ball includes a first tin (Sn)-silver (Ag)-copper (Cu) alloy.
5. The hybrid bonding structure of claim 4 , wherein the core includes a second Sn—Ag—Cu alloy, and the shell includes bismuth (Bi).
6. The hybrid bonding structure of claim 1 , wherein the core includes copper (Cu), and the shell includes at least one of indium (In) or silver (Ag).
7. The hybrid bonding structure of claim 1 , wherein the melting point of the shell is in a temperature range of about 150° C. to about 200° C.
8. The hybrid bonding structure of claim 1 , wherein a re-decomposition temperature of the intermetallic compound is in a temperature range of about 400° C. to about 650° C.
9. The hybrid bonding structure of claim 1 , wherein a ratio of a thickness of the shell to a diameter of the core is in a range of about 0.02 to about 0.5.
10. The hybrid bonding structure of claim 1 , wherein the solder paste further includes a metal particle, and the metal particle includes at least one of tin (Sn), indium (In), silver (Ag), gold (Au), copper (Cu), or nickel (Ni).
11. The hybrid bonding structure of claim 1 , wherein the core of the transient liquid phase has a diameter in a range of about 20 μm to about 45 μm.
12. The hybrid bonding structure of claim 1 , wherein a thickness of the shell of the transient liquid phase is in a range of about 1 μm to about 10 μm.
13. The hybrid bonding structure of claim 1 , wherein the transient liquid phase further includes an insertion layer between the core and the shell.
14. The hybrid bonding structure of claim 13 , wherein the insertion layer includes at least one of nickel (Ni), carbon nanotubes (CNT), graphene, or gallium (Ga).
15. The hybrid bonding structure of claim 1 , wherein the solder ball includes at least one alloy of a Sn—Ag—Cu alloy, a Sn—Bi alloy, a Sn—Bi—Ag alloy, or a Sn—Ag—Cu—Ni alloy.
16. A semiconductor device, comprising:
a circuit board;
a semiconductor chip; and
a hybrid bonding structure between the circuit board and the semiconductor chip, the hybrid bonding structure including
a solder ball, and
a solder paste bonded to the solder ball,
wherein the solder paste includes a mixture of a transient liquid phase and a flux,
wherein the transient liquid phase includes a core and a shell on a surface of the core,
wherein a melting point of the shell is lower than a melting point of the core,
wherein the core and the shell are configured to form an intermetallic compound in response to the transient liquid phase at least partially being at a temperature that is within a temperature range of about 20° C. to about 190° C.
17. The semiconductor device of claim 16 , wherein the core includes at least one of tin (Sn), silver (Ag), copper (Cu), indium (In), aluminum (Al), zinc (Zn), bismuth (Bi), nickel (Ni), or iron (Fe).
18. The semiconductor device of claim 16 , wherein the shell includes at least one of bismuth (Bi), indium (In), gallium (Ga), or silver (Ag).
19. The semiconductor device of claim 16 , wherein the solder ball includes a first tin (Sn)-silver (Ag)-copper (Cu) alloy.
20. The semiconductor device of claim 19 , wherein the core includes a second Sn—Ag—Cu alloy, and the shell includes bismuth (Bi).
21. The semiconductor device of claim 16 , wherein the core includes Cu, and the shell includes at least one of indium (In) or silver (Ag).
22. The semiconductor device of claim 16 , wherein the melting point of the shell is in a temperature range of about 150° C. to about 200° C.
23. A method of manufacturing a semiconductor device, the method comprising:
forming a semiconductor chip;
arranging a solder ball on the semiconductor chip;
applying a solder paste to a circuit board, the solder paste including a flux and a transient liquid phase, the transient liquid phase including a core and a shell;
positioning the solder ball to face the solder paste;
melting the shell at about 20° C. to about 190° C. to form an intermetallic compound between the shell and the core; and
bonding the semiconductor chip to the circuit board.
24. The method of claim 23 , wherein the core includes at least one of tin (Sn), silver (Ag), copper (Cu), indium (In), aluminum (Al), zinc (Zn), bismuth (Bi), nickel (Ni), or iron (Fe).
25. The method of claim 23 , wherein the shell includes at least one of bismuth (Bi), indium (In), gallium (Ga), or silver (Ag).
26. The method of claim 23 , further comprising:
manufacturing an electronic device that includes the semiconductor device.
27. An electronic device comprising the semiconductor device of claim 16 .
28. A solder paste composition, comprising:
a mixture of a flux and a plurality of transient liquid phases,
wherein each transient liquid phase of the plurality of transient liquid phases includes
a core, and
a shell on a surface of the core,
wherein a melting point of the shell is lower than a melting point of the core, and
wherein the core and the shell of each transient liquid phase of the plurality of transient liquid phases are configured to form an intermetallic compound to bond the plurality of transient liquid phases to each other in response to the solder paste composition at least partially being at a temperature that is within a temperature range of about 20° C. to about 190° C.
29. The solder paste composition of claim 28 , wherein the core includes at least one of tin (Sn), silver (Ag), copper (Cu), indium (In), aluminum (Al), zinc (Zn), bismuth (Bi), nickel (Ni), or iron (Fe).
30. The solder paste composition of claim 28 , wherein the shell includes at least one of bismuth (Bi), indium (In), gallium (Ga), or silver (Ag).
31. The solder paste composition of claim 28 , wherein the core includes a tin (Sn)-silver (Ag)-copper (Cu) alloy, and the shell includes bismuth (Bi).
32. The solder paste composition of claim 28 , wherein the core includes copper (Cu), and the shell includes at least one of indium (In) or silver (Ag).
33. The solder paste composition of claim 28 , wherein the melting point of the shell is in a temperature range of about 150° C. to about 200° C.
34. The solder paste composition of claim 28 , wherein a re-decomposition temperature of the intermetallic compound is in a temperature range of about 400° C. to about 650° C.
35. The solder paste composition of claim 28 , wherein a ratio of a thickness of the shell to a diameter of the core is in a range of about 0.02 to about 0.5.
36. The solder paste composition of claim 28 , wherein the core has a diameter in a range of about 20 μm to about 45 μm.
37. The solder paste composition of claim 28 , wherein a thickness of the shell is in a range of about 1 μm to about 10 μm.
38. The solder paste composition of claim 28 , further comprising:
an insertion layer between the core and the shell.
39. The solder paste composition of claim 38 , wherein the insertion layer includes at least one of nickel (Ni), carbon nanotubes (CNT), graphene, or gallium (Ga).
40. The solder paste composition of claim 28 , wherein the shell completely covers the surface of the core.
41. A solder paste composition for bonding to a solder ball, the solder paste composition comprising:
a mixture of a transient liquid phase and a flux,
wherein the transient liquid phase includes
a core, and
a shell on a surface of the core,
wherein a melting point of the shell is lower than a melting point of the core, and
wherein the core and the shell are configured to form an intermetallic compound in response to the solder paste composition at least partially being at a temperature that is within a temperature range of about 20° C. to about 190° C.