SOLID-STATE IMAGING ELEMENT AND SOLID-STATE IMAGING APPARATUS

1 .- 24 . (canceled)

25 . A solid-state imaging element comprising:

a bottom-electrode;

a top-electrode opposed to the bottom-electrode;

a photoelectric conversion layer provided between the bottom-electrode and the top-electrode and including an organic semiconductor material that has one or two or more halogen atoms in a molecule and in which binding energy of a halogen atom having smallest binding energy in the molecule is 5.4 eV or higher; and

an upper inter-layer provided between the top-electrode and the photoelectric conversion layer.

26 . The solid-state imaging element of claim 25 , wherein the first organic semiconductor material is selected from the group consisting of a quinacridone derivative, boronated subphthalocyanine derivative, pentacene derivative, fullerene derivative, benzothieno-benzothiphene derivative, and combinations thereof.

27 . The solid-state imaging element of claim 26 , wherein the first organic semiconductor material is the boronated subphthalocyanine derivative.

28 . The solid-state imaging element of claim 27 , wherein the first organic semiconductor material is boron subphthalocyanine chloride.

29 . The solid-state imaging element of claim 25 , wherein the photoelectric conversion layer includes a third organic semiconductor material or a fourth organic semiconductor material or both, the third organic semiconductor material serving as an electron donor to the first organic semiconductor material and the fourth organic semiconductor material serving as an electron acceptor to the first organic semiconductor material.

30 . The solid-state imaging element of claim 25 , wherein the upper inter-layer comprises a second organic semiconductor material having a halogen atom in a molecule, wherein a concentration of the second organic semiconductor material is less than 0.05 volume % of the upper inter-layer.

31 . The solid-state imaging element of claim 25 , wherein in a case where the top-electrode functions as a cathode, a work function (WF) of the top-electrode, an electron affinity of the upper inter-layer (EA 1 ), and an electron affinity of a material having smallest electron affinity of materials included in the photoelectric conversion layer (EA 2 ) satisfy EA 2 ≤EA 1 ≤WF.

32 . The solid-state imaging element of claim 25 , wherein in a case where the top-electrode functions as an anode, the work function (WF) of the top-electrode and the electron affinity of the upper inter-layer (EA 1 ) satisfy EA 1 >WF.

33 . The solid-state imaging element of claim 25 , wherein the top-electrode is formed from a material comprising indium tin oxide (ITO), indium zinc oxide (IZO), and indium-tungsten oxide (IWO).

34 . The solid-state imaging element of claim 25 , wherein an organic photoelectric converter including one or a plurality of the photoelectric conversion layers, and one or a plurality of inorganic photoelectric converters are stacked, the inorganic photoelectric converters performing photoelectric conversion in a different wavelength range from the organic photoelectric converter.

35 . A solid-state imaging apparatus provided with a plurality of pixels each including one or a plurality of solid-state imaging elements, each of the solid-state imaging elements comprising:

a bottom-electrode; and

a top-electrode opposed to the bottom-electrode;

a photoelectric conversion layer provided between the bottom-electrode and the top-electrode and including an organic semiconductor material that has one or two or more halogen atoms in a molecule and in which binding energy of a halogen atom having smallest binding energy in the molecule is 5.4 eV or higher; and

an upper inter-layer provided between the top-electrode and the photoelectric conversion layer.