Semiconductor memory device

1. A method of controlling a memory device, the method comprising:

receiving a write instruction;

starting a write operation to a first address in response to the write instruction;

receiving a first read instruction of the first address;

suspending the write operation;

applying a read voltage to a word line corresponding to the first address in a first read operation in response to the first read instruction; and

transmitting write data of a first memory cell held by a latch circuit to a data register as read data,

wherein the first memory cell is connected to the word line and the writing of the write data to the first memory cell is not completed.

2. The method according to claim 1 , further comprising:

transmitting data read from a second memory cell to the data register as read data;

wherein the second memory cell is connected to the word line and the writing of write data to the second memory cell is completed.

3. The method according to claim 1 , further comprising:

resuming the write operation after the first read operation.

4. The method according to claim 1 , further comprising:

setting a ready/busy signal to a busy state in response to the write instruction;

setting the ready/busy signal to a ready state from the busy state after the suspending the write operation;

setting the ready/busy signal to the busy state from the ready state in response to the first read instruction;

setting the ready/busy signal to the ready state from the busy state when the first read operation is completed; and

setting the ready/busy signal to the busy state from the ready state in response to a resume command.

5. The method according to claim 1 , wherein the suspending the write operation is performed in response to a suspend command.

6. The method according to claim 3 , wherein the resuming the write operation is performed in response to a resume command.

7. The method according to claim 3 , wherein:

the write operation includes a program loop including a program operation and a verify operation,

the suspending the write operation is performed after completion of the program operation, and

the resuming the write operation is started from the verify operation.

8. The method according to claim 3 , wherein:

the write operation includes repeating a program loop including a program operation and a verify operation,

the suspending the write operation is performed upon completion of the verify operation in one program loop, and

the resuming the write operation is started by performing the completed verify operation again in said one program loop.

9. The method according to claim 3 , wherein:

the write operation includes a program loop including a program operation and a verify operation,

the suspending the write operation is performed after completion of the verity operation, and

the resuming the write operation is started from the program operation.

10. The method according to claim 1 , further comprising:

receiving a second read instruction after the first read operation; and

outputting read data from the data register in response to the second read instruction.

11. The method according to claim 10 , further comprising:

resuming the write operation after the first read operation,

wherein the resuming the write operation is performed in parallel with the outputting the read data from the data register.

12. The method according to claim 10 , further comprising:

resuming the write operation after the first read operation,

wherein the resuming the write operation is performed after the outputting the read data from the data register.

13. The method according to claim 1 , further comprising:

repeatedly performing a program loop including a program operation and a verify operation,

wherein a write voltage applied to the word line is stepped up every time the program operation is repeated.

14. The method according to claim 1 , wherein the transmitting write data of the first memory cell held by the latch circuit to the data register as read data includes:

transmitting read data from the first memory cell to the data register;

referring to the latch circuit; and

transmitting the write data from the latch circuit to the data register when the writing of the write data to the first memory cell is not completed.

15. The method according to claim 1 , wherein the transmitting write data of the first memory cell held by the latch circuit to the data register as read data includes replacing data read from the first memory cell with the write data held by the latch circuit.

16. The method according to claim 1 , wherein:

the latch circuit is included in a sense amplifier which is coupled to the first memory cell, and

the data register is coupled to the sense amplifier.

17. The method according to claim 1 , wherein the receiving the write instruction includes:

receiving a command latch enable signal; and

receiving an address latch enable signal.

18. A method of controlling a memory device, the method comprising:

receiving a write instruction;

starting a write operation to a first address in response to the write instruction;

receiving a first read instruction of the first address;

suspending the write operation;

applying a read voltage to a word line corresponding to the first address in a first read operation in response to the first read instruction;

setting a ready/busy signal to a busy state in response to the write instruction;

setting the ready/busy signal to a ready state from the busy state when transmission of write data from the data register to the latch circuit is completed;

setting the ready/busy signal to the busy state from the ready state after the suspending the write operation; and

setting the ready/busy signal to the ready state from the busy state when the first read operation is completed.