Substrate holder and methods of use

1. A method, comprising:

in an extreme ultraviolet (EUV) lithography system, generating EUV radiation;

reflecting the extreme ultraviolet radiation from a mask;

receiving the extreme ultraviolet radiation, reflected by the mask, at a semiconductor substrate;

supporting the semiconductor substrate by a substrate holder, the substrate holder including a plurality of burls and a plurality of fluid passages in fluid communication with a substrate receiving surface of the substrate holder and in fluid communication with a source of variable gas pressure;

adjusting pressure within a void between a backside of the semiconductor substrate and the substrate receiving surface;

passing a non-gaseous material from the void between a backside of the substrate and the substrate receiving surface through one or more of the plurality of fluid passages; and

exposing material on the semiconductor substrate to the extreme ultraviolet radiation received at the semiconductor substrate.

2. The method of claim 1 , wherein adjusting pressure within the void between the backside of the semiconductor substrate and the substrate receiving surface includes reducing the pressure in the void.

3. The method of claim 1 , wherein adjusting pressure within the void between the backside of the semiconductor substrate and the substrate receiving surface includes increasing the pressure in the void.

4. The method of claim 1 , wherein adjusting pressure within the void between the backside of the semiconductor substrate and the substrate receiving surface includes alternatively increasing the pressure within the void and decreasing the pressure within the void.

5. The method of claim 1 , wherein passing a non-gaseous material from the void through one or more of the plurality of fluid passages includes passing a solid material through one or more of the plurality of fluid passages.

6. The method of claim 1 , wherein supporting the semiconductor substrate by the substrate holder includes generating an electrostatic force and applying the electrostatic force to the semiconductor substrate.

7. The method of claim 1 , wherein the plurality of fluid passages include a cross-sectional area that varies along a first axis, the plurality of fluid passages are arranged along a second axis transverse to the first axis.

8. A method, comprising:

in an ultraviolet (UV) lithography system, generating UV radiation;

reflecting the ultraviolet radiation from an ultraviolet radiation reflecting component of the ultraviolet lithography system;

receiving the ultraviolet radiation, reflected by the ultraviolet radiation reflecting component, at a semiconductor substrate

supporting the semiconductor substrate by a substrate holder, the substrate holder including a plurality of support surfaces and a plurality of fluid passages in fluid communication with a substrate receiving surface of the substrate holder and in fluid communication with a source of variable gas pressure;

adjusting pressure within a void between a backside of the semiconductor substrate and the substrate receiving surface; and

exposing material on the semiconductor substrate to the ultraviolet radiation received at the semiconductor substrate.

9. The method of claim 8 , wherein the generating UV radiation includes generating extreme ultraviolet radiation.

10. The method of claim 8 , wherein adjusting pressure within the void between the backside of the semiconductor substrate and the substrate receiving surface includes drawing gas into one or more of the plurality of fluid passages, the plurality of fluid passages being located between the plurality of support surfaces.

11. The method of claim 8 , wherein adjusting pressure within the void between the backside of the semiconductor substrate and the substrate receiving surface includes drawing gas into one or more of the plurality of fluid passages, the plurality of fluid passages located in a support surface.

12. The method of claim 8 , wherein adjusting pressure within the void between the backside of the semiconductor substrate and the substrate receiving surface includes reducing the pressure in the void.

13. The method of claim 8 , further comprising dislodging a non-gaseous material from one or more of the plurality of support surfaces into a trough between the support surfaces.

14. The method of claim 13 , further comprising passing a non-gaseous material from the void between the backside of the semiconductor substrate and the substrate receiving surface through one or more of the plurality of fluid passages.

15. A substrate holder subsystem in an ultraviolet lithography system, the ultraviolet lithography system comprising:

an ultraviolet radiation source;

projection optics; and

the substrate holder subsystem including:

a support device;

a source for providing a vacuum gas pressure;

a substrate holder configured to couple a substrate to the support device, the substrate holder including a plurality of support surfaces in a plurality of circles that are arranged concentrically, and a plurality of fluid passages in fluid communication with a substrate receiving surface of the substrate holder and in fluid communication with the source for providing a vacuum gas pressure, the plurality of fluid passages being located between the plurality of support surfaces; and

a pedestal coupled to the support device, the pedestal including a gas flow channel in fluid communication with one or more of the plurality of fluid passages and in fluid communication with the source for providing a vacuum gas pressure.

16. The substrate holder subsystem of claim 15 , wherein two of the plurality of support surfaces are separated by a trough and one or more of the plurality of fluid passages is located in the trough.

17. The substrate holder subsystem of claim 16 , wherein the one or more of the plurality of fluid passages includes an opening at the bottom of the trough.

18. The substrate holder subsystem of claim 16 , wherein the one or more of the plurality of fluid passages includes an opening at a sidewall of the trough.

19. The substrate holder subsystem of claim 15 , wherein one or more of the plurality of fluid passages includes a longitudinal axis that forms an angle with a first axis, the plurality of fluid passages are arranged along a second axis transverse to the first axis.

20. The substrate holder subsystem of claim 15 , wherein the source for providing a vacuum gas pressure is a vacuum pump.