Semiconductor memory devices with different word lines

1. A memory device, comprising:

a bit line (BL);

a source line (SL); and

a plurality of non-volatile memory cells operatively coupled between the BL and SL, respectively; wherein each of the plurality of non-volatile memory cells includes a resistor with a variable resistance, a first transistor, and a second transistor that are coupled to each other in series; and

wherein, in response to a first one of the non-volatile memory cell not being read and a second one of the non-volatile memory cell being read, a voltage level at a first node connected between the first and second transistors of the first non-volatile memory cell is greater than zero, wherein the first and second transistors are both n-type transistors.

2. The memory device of claim 1 , wherein a voltage level at a second node connected between the first and second transistors of the second non-volatile memory cell is equal to zero.

3. The memory device of claim 1 , further comprising:

a first word line (WL 1 ) configured to gate the first transistor of the first non-volatile memory cell with a first voltage; and

a second word line (WL 2 ) configured to gate the second transistor of the first non-volatile memory cell with a second voltage;

wherein the second voltage is greater than the first voltage thereby causing the voltage level at the first node to be greater than zero.

4. The memory device of claim 1 , wherein each of the non-volatile memory cells further comprises a third transistor having a first source/drain terminal connected to both of the first and second transistors, the memory device further comprises:

a first word line (WL 1 ) configured to gate the first transistor of the first non-volatile memory cell with a first voltage; and

a second word line (WL 2 ) configured to gate the second transistor of the first non-volatile memory cell with a second voltage;

wherein the third transistor of the first non-volatile memory cell is turned on thereby causing the voltage level at the first node to be greater than zero.

5. The memory device of claim 4 , wherein the first voltage is substantially equal to the second voltage.

6. The memory device of claim 4 , wherein the first and second transistors have a first conduction type, and the third transistor has a second, opposite conduction type.

7. The memory device of claim 4 , wherein the third transistor has a second source/drain terminal biased at a supply voltage that is substantially equal to the voltage level at the first node.

8. The memory device of claim 1 , wherein the resistor has a first terminal connected to the BL and a second terminal connected to a first source/drain terminal of the first transistor, the first transistor has a second source/drain terminal connected to a first source/drain terminal of the second transistor, and the second transistor has a second source/drain terminal connected to the SL.

9. The memory device of claim 1 , wherein the resistor includes a phase-change layer that has the variable resistance.

10. A memory device, comprising:

a non-volatile memory cell comprising a resistor, a first transistor, and a second transistor;

wherein the resistor is operatively coupled to a bit line (BL); the first transistor is connected to the resistor in series and gated by a first word line (WL 1 ); and the second transistor connected to the first transistor in series, operatively coupled to a source line (SL), and gated by a second word line (WL 2 ); and

wherein when the WL 1 and WL 2 are not asserted but the BL is asserted for reading an adjacent non-volatile memory cell also operatively coupled to the same BL, a voltage level at a node commonly connecting to both the first and second transistors is increased to be higher than zero, wherein the resistor includes a phase-change layer that is characterized with a variable resistance.

11. The memory device of claim 10 , wherein the WL 1 and WL 2 are applied with a first voltage and a second voltage, respectively, and wherein the first voltage is less than the second voltage such that the voltage level at the node is increased to be higher than zero.

12. The memory device of claim 11 , wherein the first voltage is substantially equal to 0 volt (V) and the second voltage is greater than 0V.

13. The memory device of claim 10 , wherein the non-volatile memory cell further comprises a third transistor having: a first source/drain terminal connected to the node; and a second source/drain terminal connected to a supply voltage, wherein the WL 1 and WL 2 are applied with a first voltage and a second voltage, respectively, and wherein the first voltage is equal to the second voltage.

14. The memory device of claim 13 , wherein the third transistor is turned on such that the voltage level at the node is increased to be higher than zero.

15. A memory device, comprising:

a bit line (BL);

a source line (SL); and

a plurality of non-volatile memory cells operatively coupled between the BL and SL, respectively, wherein each of the plurality of non-volatile memory cells includes a resistor with a variable resistance, a first transistor, and a second transistor that are coupled to each other in series;

wherein, in response to a first one of the non-volatile memory cell not being read and a second one of the non-volatile memory cell being read, a voltage level at a first node connected between the first and second transistors of the first non-volatile memory cell is greater than zero, and a voltage level at a second node connected between the first and second transistors of the second non-volatile memory cell is equal to zero, wherein the first and second transistors are both p-type transistors.