Composition, resist underlayer film, method of forming resist underlayer film, method of producing patterned substrate, and compound
The composition contains: a compound which has a group represented by formula (1); and a solvent. In the formula (1), R 1 and R 2 each independently represent a substituted or unsubstituted aryl group having 6 to 30 ring atoms or a substituted or unsubstituted heteroaryl group having 5 to 30 ring atoms; R 3 represents a hydrogen atom or a substituted or unsubstituted monovalent aliphatic hydrocarbon group having 1 to 10 carbon atoms; and * denotes a bonding site to a part other than the group represented by the following formula (1) in the compound.
1. A composition comprising:
a compound represented by formula (2); and
a solvent,
wherein, in the formula (1), R 1 and R 2 each independently represent a substituted or unsubstituted aryl group having 6 to 30 ring atoms or a substituted or unsubstituted heteroaryl group having 5 to 30 ring atoms; at least one of R 1 and R 2 represents a substituted or unsubstituted naphthyl group, a substituted or unsubstituted anthryl group, a substituted or unsubstituted fluorenyl group, a substituted or unsubstituted phenanthryl group, a substituted or unsubstituted phenalenyl group, a substituted or unsubstituted pyrenyl group, a substituted or unsubstituted chrysenyl group, a substituted or unsubstituted triphenylenyl group, a substituted or unsubstituted tetracenyl group, a substituted or unsubstituted perylenyl group, a substituted or unsubstituted picenyl group, a substituted or unsubstituted pentacenyl group, a substituted or unsubstituted hexacenyl group, a substituted or unsubstituted coronenyl group, a substituted or unsubstituted trinaphthylenyl group, a substituted or unsubstituted heptacenyl group, or a substituted or unsubstituted heteroaryl group having 5 to 30 ring atoms; R 3 represents a hydrogen atom or a substituted or unsubstituted monovalent aliphatic hydrocarbon group having 1 to 10 carbon atoms; n is an integer of 2 to 10, wherein a plurality of R 1 s are identical or different from each other, a plurality of R 2 s are identical or different from each other, and a plurality of R 3 s are identical or different from each other; and R 4 represents an organic group having a valency of n and having an aromatic ring which has 5 to 40 ring atoms.
2. The composition according to claim 1 , wherein the substituted or unsubstituted monovalent aliphatic hydrocarbon group which is represented by R 3 is a substituted or unsubstituted monovalent chain hydrocarbon group.
3. The composition according to claim 1 , wherein R 3 represents a hydrogen atom.
4. The composition according to claim 1 , wherein at least one of R 1 and R 2 represents a group represented by formula (3):
wherein, in the formula (3), R 5 represents a hydrogen atom or a monovalent aliphatic hydrocarbon group having 1 to 10 carbon atoms; Ar represents a group obtained by removing (m+1) hydrogen atoms from an aromatic ring having 6 to 30 ring atoms; m is an integer of 1 to 3; ** denotes a binding site to a carbon atom to which R 1 or R 2 bonds in the formula (1);
and in a case in which m is no less than 2, a plurality of R 5 s are identical or different from each other.
5. The composition according to claim 1 , wherein a proportion of hydrogen atoms with respect to all atoms constituting the compound is no greater than 7% by mass.
6. The composition according to claim 1 , wherein a molecular weight of the compound is no less than 300 and no greater than 3,000.
7. A method of forming a resist underlayer film, the method comprising:
applying the composition according to claim 1 directly or indirectly on a substrate.
8. A method of producing a patterned substrate, the method comprising:
forming a resist underlayer film directly or indirectly on a substrate by applying the composition according to claim 1 ;
forming a resist pattern directly or indirectly on the resist underlayer film; and
carrying out etching using the resist pattern as a mask.
9. The method according to claim 8 , further comprising, before forming the resist pattern, forming a silicon-containing film directly or indirectly on the resist underlayer film formed.
10. A compound represented by formula (2):
wherein, in the formula (2), R 1 and R 2 each independently represent a substituted or unsubstituted aryl group having 6 to 30 ring atoms or a substituted or unsubstituted heteroaryl group having 5 to 30 ring atoms; at least one of R 1 and R 2 represents a substituted or unsubstituted naphthyl group, a substituted or unsubstituted anthryl group, a substituted or unsubstituted fluorenyl group, a substituted or unsubstituted phenanthryl group, a substituted or unsubstituted phenalenyl group, a substituted or unsubstituted pyrenyl group, a substituted or unsubstituted chrysenyl group, a substituted or unsubstituted triphenylenyl group, a substituted or unsubstituted tetracenyl group, a substituted or unsubstituted perylenyl group, a substituted or unsubstituted picenyl group, a substituted or unsubstituted pentacenyl group, a substituted or unsubstituted hexacenyl group, a substituted or unsubstituted coronenyl group, a substituted or unsubstituted trinaphthylenyl group, a substituted or unsubstituted heptacenyl group, or a substituted or unsubstituted heteroaryl group having 5 to 30 ring atoms; R 3 represents a hydrogen atom or a substituted or unsubstituted monovalent aliphatic hydrocarbon group having 1 to 10 carbon atoms; n is an integer of 2 to 10, wherein a plurality of R 1 s are identical or different from each other, a plurality of R 2 s are identical or different from each other, and a plurality of R 3 s are identical or different from each other; and R 4 represents an organic group having a valency of n and having an aromatic ring which has 5 to 40 ring atoms.
11. The composition according to claim 1 , wherein at least one of R 1 and R 2 represents a substituted or unsubstituted fluorenyl group or a substituted or unsubstituted pyrenyl group.
12. The compound according to claim 10 , wherein at least one of R 1 and R 2 represents a substituted or unsubstituted fluorenyl group or a substituted or unsubstituted pyrenyl group.
13. The compound according to claim 10 , wherein the substituted or unsubstituted monovalent aliphatic hydrocarbon group which is represented by R 3 is a substituted or unsubstituted monovalent chain hydrocarbon group.
14. The compound according to claim 10 , wherein R 3 represents a hydrogen atom.
15. The composition according to claim 1 , wherein R 4 represents a group represented by formula (II-1), formula (II-2), formula (II-3), formula (II-4), or formula (II-5):
wherein ** denotes a binding site to a carbon atom to which R 4 in the formula (2) bonds.
16. The compound according to claim 10 , wherein R 4 represents a group represented by formula (II-1), formula (II-2), formula (II-3), formula (II-4), or formula (II-5):
wherein *** denotes a binding site to a carbon atom to which R 4 in the formula (2) bonds.