IP Library Granted Patent US 11,916,089
Granted Patent B2
US 11,916,089 · App. 17/483,291 · Granted Feb 27, 2024

Solid-state image pickup device and image pickup apparatus

Inventors: Takashi Abe (Kanagawa, JP); Ikuhiro Yamamura (Kanagawa, JP)
Assignee: SONY GROUP CORPORATION
H01L27/14605H01L27/146H01L27/14609H01L27/14812H04N25/40H04N25/59H04N25/76
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Quick Facts
Patent No.
US 11,916,089
App. No.
17/483,291
Granted
Feb 27, 2024
Kind
B2
Abstract

A solid-state image pickup device includes a plurality of pixels, a pixel connection section, and a pixel reset section. The plurality of pixels each include a photoelectric conversion section that generates a charge according to irradiated light, a charge holding section that holds the generated charge, and a signal generation section that generates as an image signal a signal according to the held charge. The pixel connection section conducts between charge holding sections of the plurality of pixels and thereby allows each of the charge holding sections of the plurality of pixels to hold the charge that has been generated by the photoelectric conversion section of one pixel of the plurality of pixels. The pixel reset section discharges and resets the charge of the respective charge holding sections of the plurality of pixels when the pixel connection section conducts between the respective charge holding sections of the plurality of pixels.

Claims (43)

1. A light detecting device, comprising:

a first pixel including:

a first photoelectric conversion region;

a first charge holding region coupled to the first photoelectric conversion region via a first transfer transistor;

an amplification transistor;

a first wiring directly connected between the first charge holding region and a gate electrode of the amplification transistor; and

a first switch transistor configured to couple the first charge holding region to a second charge holding region;

a second pixel including:

a second photoelectric conversion region; and

a third charge holding region coupled to the second photoelectric conversion region via a second transfer transistor; and

a pixel connection circuit coupled to the second charge holding region and the third charge holding region.

2. The light detecting device of claim 1 , wherein

the second pixel further includes a second switch transistor configured to couple the third charge holding region to a fourth charge holding region.

3. The light detecting device of claim 1 , wherein

the pixel connection circuit includes a transistor.

4. The light detecting device of claim 1 , wherein

the first and second pixels are in a same column of a pixel array.

5. The light detecting device of claim 1 , wherein

a conversion efficiency of the first and second pixels is changeable in multiple-stages.

6. The light detecting device of claim 1 , wherein

the first and second pixels output a pixel signal via a same signal line.

7. The light detecting device of claim 1 , wherein

the second charge holding region is included in the first pixel.

8. The light detecting device of claim 1 , wherein

the first pixel further comprises a selection transistor coupled to the amplification transistor.

9. The light detecting device of claim 8 , wherein

a drain of the amplification transistor is coupled to a power source, and a source of the amplification transistor is coupled to the selection transistor.

10. The light detecting device of claim 2 , further comprising:

a third pixel including:

a third photoelectric conversion region; and

a fifth charge holding region; and

a second pixel connection circuit configured to couple the fourth charge holding region to the fifth charge holding region.

11. The light detecting device of claim 10 , wherein

the first, second and third pixels are in a same column of a pixel array.

12. The light detecting device of claim 1 , wherein

a reset transistor coupled to the first charge holding region is configured to discharge a charge held by the first and second charge holding regions by turning on the first switch transistor.

13. The light detecting device of claim 12 , wherein

the reset transistor is configured to discharge a charge held by the third charge holding region by turning on the pixel connection circuit.

14. The light detecting device of claim 1 , wherein

the second pixel does not include a reset transistor.

15. A light detecting apparatus, comprising:

the light detecting device according to claim 1 ; and

a processing circuit that processes an image signal generated from the light detecting device.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 23, 2021
From: ABE, TAKASHI; YAMAMURA, IKUHIRO
To: SONY CORPORATION
Reel/Frame 057581/0031 →
CHANGE OF NAME Recorded Sep 23, 2021
From: SONY CORPORATION
To: SONY GROUP CORPORATION
Reel/Frame 057595/0669 →
Priority Claims (1)
JP 2016-103154 · May 24, 2016 · national
Continuity (2)
Continuation 16302238
Related Publication 20220013558A1 · Jan 13, 2022