Resistive hotspot temperature sensor
Various techniques for implementing resistive temperature sensors that rely on the resistors' temperature sensitivity to provide temperature sensing are disclosed. Temperature sensitive resistors may be implemented in a resistor stack in combination with a resistor stack of resistors that are relatively temperature indifferent. Various temperature sensor circuits implementing these temperature sensitive resistors are also disclosed. A temperature sensor circuit may implement the temperature sensitive resistors along with the resistors that are relatively stable with temperature to output a voltage signal that is indicative of the temperature sensed by the circuit. In some instances, the signal from the temperature sensitive resistors is increased through the use of a feedback resistor loop.
1. An integrated circuit device, comprising:
a first resistor stack having a plurality of metal layers separated by a plurality of electrically insulating layers, the metal layers being connected by vias through the electrically insulating layers, wherein the metal layers have a plurality of metal traces separated by electrically insulating material, the metal traces being interconnected at end portions of the metal traces;
a second resistor stack having at least one metal layer connected to an upper metal layer of the first resistor stack by a via through an electrically insulating layer in the second resistor stack;
wherein the first resistor stack has a first temperature coefficient and the second resistor stack has a second temperature coefficient, the first temperature coefficient having an absolute value higher than an absolute value of the second temperature coefficient; and
wherein a differential between a first voltage across the first resistor stack and a second voltage across the second resistor stack is indicative of a temperature of the integrated circuit device.
2. The integrated circuit device of claim 1 , wherein the first resistor stack is formed on a silicon substrate.
3. The integrated circuit device of claim 2 , wherein the second resistor stack is formed on the first resistor stack.
4. The integrated circuit device of claim 2 , further comprising at least one metal layer between the first resistor stack and the silicon substrate, wherein the at least one metal layer includes power and ground connections to the first resistor stack.
5. The integrated circuit device of claim 1 , wherein the absolute value of the first temperature coefficient is at least five times the absolute value of the second temperature coefficient.
6. The integrated circuit device of claim 1 , wherein an absolute value of the first temperature coefficient is at least about 500 ppm/° C.
7. The integrated circuit device of claim 1 , wherein an absolute value of the second temperature coefficient is at most about 200 ppm/° C.
8. The integrated circuit device of claim 1 , wherein the metal layers in the first resistor stack have a piezoresistivity lower than a piezoresistivity of doped silicon.
9. The integrated circuit device of claim 1 , wherein the first resistor stack includes five metal layers and the second resistor stack includes two metal layers.
10. The integrated circuit device of claim 1 , wherein the first resistor stack has an electrical resistivity of between 10 Ω/μm and 30 Ω/μm.
11. A temperature sensor for an integrated circuit device, comprising:
a first resistor stack having a plurality of metal layers separated by a plurality of electrically insulating layers, the metal layers being connected by vias through the electrically insulating layers, wherein the metal layers have a plurality of metal traces separated by electrically insulating material, the metal traces being interconnected at end portions of the metal traces, wherein the first resistor stack has a first temperature coefficient;
a second resistor stack having at least one metal layer connected to an upper metal layer of the first resistor stack by a via through an electrically insulating layer in the second resistor stack, wherein the second resistor stack has a second temperature coefficient, the first temperature coefficient having an absolute value higher than an absolute value of the second temperature coefficient; and
a temperature sensor circuit associated with the first resistor stack and the second resistor stack, wherein the temperature sensor circuit is configured to assess a differential current between a first voltage across the first resistor stack and a second voltage across the second resistor stack, and wherein the temperature sensor circuit is configured to provide an output indicative of a temperature of the integrated circuit device based on the assessed differential.
12. The temperature sensor of claim 11 , wherein the first temperature coefficient is a positive temperature coefficient and the second temperature coefficient is a negative temperature coefficient.
13. The temperature sensor of claim 11 , wherein the absolute value of the first temperature coefficient is at least about 500 ppm/° C. and the absolute value of the second temperature coefficient is at most about 200 ppm/° C.
14. The temperature sensor of claim 11 , wherein the first resistor stack and the second resistor stack are coupled in series between a voltage supply and a voltage ground.
15. The temperature sensor of claim 11 , wherein the temperature sensor circuit includes an amplifier having an input and an output, and wherein the input of the amplifier is coupled to a node between the first resistor stack and the second resistor stack.
16. The temperature sensor of claim 15 , wherein the temperature sensor circuit includes a feedback resistor stack, the feedback resistor stack being coupled to the output of the amplifier and to the node between the first resistor stack and the second resistor stack, and wherein the feedback resistor stack has the first temperature coefficient.
17. The temperature sensor of claim 16 , wherein the amplifier is configured to output a voltage signal that corresponds to differentials between a resistance of the first resistor stack and a resistance of the second resistor stack, the output voltage signal being indicative of the temperature of the integrated circuit device.
18. A method for determining a temperature of an integrated circuit device, comprising:
assessing, by a temperature sensor circuit positioned in the integrated circuit device, a differential between a first voltage across a first resistor stack and a second voltage across a second resistor stack, wherein:
the first resistor stack includes a plurality of metal layers separated by a plurality of electrically insulating layers, the metal layers being connected by vias through the electrically insulating layers, wherein the metal layers have a plurality of metal traces separated by electrically insulating material, the metal traces being interconnected at end portions of the metal traces, and wherein the first resistor stack has a first temperature coefficient; and
the second resistor stack includes at least one metal layer connected to an upper metal layer of the first resistor stack by a via through an electrically insulating layer in the second resistor stack, wherein the second resistor stack has a second temperature coefficient, the first temperature coefficient having an absolute value higher than an absolute value of the second temperature coefficient;
providing, by the temperature sensor circuit, a voltage signal output corresponding to the assessed differential; and
determining a temperature of the integrated circuit device based on the voltage signal output.
19. The method of claim 18 , wherein the voltage signal output is output as a digital signal by the temperature sensor circuit.
20. The method of claim 19 , further comprising applying one or more polynomials to the digital signal to determine the temperature of the integrated circuit device.