Polishing liquid, polishing liquid set, and polishing method
A polishing liquid containing abrasive grains, a hydroxy acid, a polyol, a cationic compound, and a liquid medium, in which a zeta potential of the abrasive grains is positive and a weight average molecular weight of the cationic compound is less than 1000.
1. A polishing liquid comprising: abrasive grains; a hydroxy acid component including a hydroxy acid including a hydroxyl group and a carboxyl group, the hydroxyl group not forming part of the carboxyl group; a polyol component; a cationic component comprising a cationic compound; and a liquid medium, wherein
the abrasive grains comprise more than 50% by mass of ceria based on the total mass of the abrasive grains,
a zeta potential of the abrasive grains is positive, and
a weight average molecular weight of the cationic compound of the cationic component is less than 1000.
2. The polishing liquid according to claim 1 , wherein the cationic component contains at least one selected from the group consisting of lauryl trimethyl ammonium chloride, trimethyl-2-methacryloyloxyethyl ammonium chloride, and 3-(methacryloylamino)propyl trimethylammonium chloride.
3. The polishing liquid according to claim 1 , wherein the cationic component contains at least one selected from the group consisting of trimethyl-2-methacryloyloxyethyl ammonium chloride and 3-(methacryloylamino)propyl trimethylammonium chloride.
4. The polishing liquid according to claim 1 , wherein the polishing liquid does not comprise a polyol having an aromatic group.
5. The polishing liquid according to claim 1 , wherein the polyol component comprises a polyoxyalkylene sorbitol ether.
6. The polishing liquid according to claim 1 , wherein the polyol component comprises a polyoxyalkylene condensate of ethylenediamine.
7. The polishing liquid according to claim 1 , wherein the polyol component comprises a polyoxyalkylene trimethylolpropane ether.
8. The polishing liquid according to claim 1 , wherein the hydroxy acid component contains a saturated monocarboxylic acid.
9. The polishing liquid according to claim 1 , wherein a hydroxyl value of the hydroxy acid is 1500 or less.
10. The polishing liquid according to claim 1 , wherein the abrasive grains further contain at least one selected from the group consisting of silica, alumina, zirconia, yttria, and a hydroxide of a tetravalent metal element.
11. The polishing liquid according to claim 1 , wherein a content of the polyol component is 0.05 to 5.0% by mass.
12. A polishing method comprising a step of polishing a surface to be polished by using a polishing liquid obtained by mixing the first liquid and the second liquid of the polishing liquid set according to claim 11 .
13. A polishing method for a base substrate having an insulating material and silicon nitride, the method comprising:
a step of selectively polishing the insulating material with respect to the silicon nitride by using a polishing liquid obtained by mixing the first liquid and the second liquid of the polishing liquid set according to claim 11 .
14. A polishing method for a base substrate having an insulating material and polysilicon, the method comprising:
a step of selectively polishing the insulating material with respect to the polysilicon by using a polishing liquid obtained by mixing the first liquid and the second liquid of the polishing liquid set according to claim 11 .
15. The polishing liquid according to claim 1 , wherein a content of the hydroxy acid component is 0.01 to 1.0% by mass.
16. The polishing liquid according to claim 1 , wherein a content of the cationic component is 0.001 to 0.1% by mass.
17. A polishing liquid set comprising:
constituent components of the polishing liquid according to claim 1 , separately stored as a first liquid and a second liquid, wherein
the first liquid contains the abrasive grains and the liquid medium, and
the second liquid contains the hydroxy acid component, the polyol component, the cationic component, and the liquid medium.
18. A polishing method comprising a step of polishing a surface to be polished by using the polishing liquid according to claim 1 .
19. A polishing method for a base substrate having an insulating material and silicon nitride, the method comprising:
a step of selectively polishing the insulating material with respect to the silicon nitride by using the polishing liquid according to claim 1 .
20. A polishing method for a base substrate having an insulating material and polysilicon, the method comprising:
a step of selectively polishing the insulating material with respect to the polysilicon by using the polishing liquid according to claim 1 .
21. The polishing liquid according to claim 1 , wherein the cationic component comprises a plurality of cationic compounds.
22. The polishing liquid according to claim 21 , wherein each of the plurality of cationic compounds has a weight average molecular weight of less than 1000.