Semiconductor device having a carbon containing insulation layer formed under the source/drain
An interconnection structure and a method of manufacturing an interconnection structure are provided. The interconnection structure includes a first dielectric layer, a first conductive via in the first dielectric layer, and a first metal line disposed on the first dielectric layer and electrically connected with the first conductive via. At least a portion of the first metal line is exposed to a first air gap.
1. An interconnection structure, comprising:
a first dielectric layer;
a first conductive via in the first dielectric layer; and
a first metal line disposed on the first dielectric layer and electrically connected with the first conductive via; wherein at least a portion of the first metal line is exposed to a first air gap;
a second dielectric layer disposed on the first metal line and defining a second air gap over the first air gap.
2. The interconnection structure of claim 1 , wherein a portion of a top surface of the first dielectric layer is exposed to the first air gap.
3. The interconnection structure of claim 1 , wherein the first metal line comprises a first lateral surface exposed to the first air gap and a second lateral surface in contact with the first dielectric layer.
4. The interconnection structure of claim 1 , further comprising:
a second metal line disposed on the first dielectric layer and physically spaced apart from the first metal line, wherein at least a portion of the second metal line is exposed to the first air gap.
5. The interconnection structure of claim 1 , wherein a width of the second air gap is less than a width of the first gap.
6. The interconnection structure of claim 1 , further comprising:
a second conductive via penetrating through the second dielectric layer and electrically connected with the first metal line.
7. The interconnection structure of claim 6 , further comprising:
a third dielectric layer disposed on the second dielectric layer and covering the second air gap.
8. The interconnection structure of claim 7 , further comprising:
a third metal line disposed on the third dielectric layer and electrically connected with the second conductive via, wherein at least a portion of the third metal line is exposed to a third air gap.
9. The interconnection structure of claim 8 , wherein the third air gap is physically separated from the second air gap through the third dielectric layer.
10. An interconnection structure, comprising:
a first dielectric layer;
a second dielectric layer disposed over the first dielectric layer;
a first conductive structure disposed between the first dielectric layer and the second dielectric layer; and
a second conductive structure disposed between the first dielectric layer and the second dielectric layer, wherein the second conductive structure is isolated from the first conductive structure through a first air gap;
wherein the second dielectric layer defines a second air gap over the first air gap, and wherein a width of the second air gap is less than a width of the first gap.
11. The interconnection structure of claim 10 , wherein the first conductive structure comprises a first lateral surface exposed to the first air gap and a second lateral surface in contact with the first dielectric layer.
12. The interconnection structure of claim 10 , further comprising:
a third dielectric layer disposed on the second dielectric layer and covering the second air gap; and
a third conductive structure disposed on the third dielectric layer and electrically connected with the first conductive structure, wherein the third conductive structure is exposed to a third air gap, and wherein the third air gap is physically separated from the second air gap through the third dielectric layer.