Granted Patent B2

US 12,501,766 · App. 17/496,400 · Granted Dec 16, 2025

Inventors: Stephen R. Forrest (Ann Arbor, MI); Caleb Coburn (Ann Arbor, MI); Yue Qu (Ann Arbor, MI)

Assignee: The Regents of the University of Michigan

H10K50/19H10K50/11H10K50/15H10K50/16H10K50/17H10K50/82H10K85/30H10K85/631H10K85/6572H10K2101/40H10K2102/351

Abstract

Claims (28)

1 . An organic optoelectronic device, comprising:

an anode;

a single emissive layer positioned over the anode;

a charge generation layer stack spacer positioned over the emissive layer, the charge generation layer stack spacer comprising at least one hole transport layer and at least one electron transport layer positioned over the hole transport layer; and

a cathode positioned over the charge generation layer stack spacer.

2 . The organic optoelectronic device of claim 1 , wherein the charge generation layer stack spacer has a thickness of between 100 nm and 200 nm.

3 . The organic optoelectronic device of claim 1 , wherein the at least one hole transport layer has a thickness of between 75 nm and 135 nm.

4 . The organic optoelectronic device of claim 1 , wherein the at least one hole transport layer comprises 1,1-bis((di-4-tolylamino)phenyl)cyclohexane.

5 . The organic optoelectronic device of claim 1 , wherein the charge generation layer stack spacer comprises at least first and second electron transport layers.

6 . The organic optoelectronic device of claim 5 , wherein the second electron transport layer is positioned between the hole transport layer and the emissive layer.

7 . The organic optoelectronic device of claim 5 , wherein the at least one electron transport layer comprises 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile.

8 . The organic optoelectronic device of claim 5 , wherein the at least one electron transport layer has a thickness of between 10 nm and 25 nm.

9 . The organic optoelectronic device of claim 1 , further comprising at least one hole injection layer between the emissive layer and the anode.

10 . An organic optoelectronic device, comprising:

an anode;

a cathode;

a single emissive layer positioned between the anode and the cathode at a distance from the cathode of at least 200 nm; and

at least one charge generation layer stack spacer comprising at least one electron transport layer and at least one hole transport layer positioned between the emissive layer and the cathode.

11 . The organic optoelectronic device of claim 10 , wherein the distance is at least 230 nm.

12 . The organic optoelectronic device of claim 10 , wherein the distance is between 220 nm and 250 nm.

13 . The organic optoelectronic device of claim 10 , wherein the at least one hole transport layer has a thickness of between 75 nm and 135 nm.

14 . The organic optoelectronic device of claim 10 , wherein the at least one electron transport layer comprises a first electron transport layer positioned between the cathode and the hole transport layer, and a second electron transport layer positioned between the hole transport layer and the emissive layer.

15 . The organic optoelectronic device of claim 10 , wherein the at least one hole transport layer comprises 1,1-bis((di-4-tolylamino)phenyl)cyclohexane.

16 . The organic optoelectronic device of claim 10 , wherein the at least one electron transport layer is positioned between the cathode and the at least one hole transport layer.

17 . The organic optoelectronic device of claim 10 , wherein the at least one electron transport layer comprises 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile.

18 . The organic optoelectronic device of claim 10 , wherein the at least one electron transport layer has a thickness of between 10 nm and 25 nm.

19 . The organic optoelectronic device of claim 1 , wherein the charge generation layer stack spacer is in direct contact with the cathode.

20 . The organic optoelectronic device of claim 10 , wherein the charge generation layer stack spacer is in direct contact with the cathode.

Assignments (2)

Continuity (2)

References Cited (38)