Stacked nanosheet gate-all-around device structures
A semiconductor device including a substrate; a continuous buried oxide layer (BOX) formed on the substrate; and a plurality of nanosheet gate-all-round (GAA) device structures on the BOX, wherein a first plurality of stacked gates of the nanosheet GAA device structures are disposed in a logic portion of the substrate and have a first nanosheet width, wherein a second plurality of stacked gates of the nanosheet GAA device structures are disposed in a high density region of the substrate and have a second nanosheet width less than the first nanosheet width, wherein the nanosheet GAA device structures are disposed directly on the continuous buried oxide layer, and wherein a bottom layer of the nanosheet GAA device structures is a bottom gate formed directly on the BOX.
1. A device comprising:
a substrate;
a continuous buried oxide layer on the substrate; and
a plurality of nanosheet gate-all-round (GAA) device structures on the continuous buried oxide layer,
wherein a first plurality of stacked gates of the nanosheet GAA device structures are disposed in a logic region of the substrate and have a first nanosheet width,
wherein a second plurality of stacked gates of the nanosheet GAA device structures are disposed in a high density region of the substrate and have a second nanosheet width less than the first nanosheet width,
wherein the nanosheet GAA device structures are disposed directly on the continuous buried oxide layer, and
wherein a bottom layer of the nanosheet GAA device structures is a bottom gate disposed directly on the continuous buried oxide layer.
2. The device of claim 1 , wherein the nanosheet GAA device structures comprise a plurality of alternating layers of a high-K gate material and a metal material.
3. The device of claim 2 , wherein the layers of the high-K gate material and the metal material have different thicknesses.
4. The device of claim 2 , wherein the layers of the high-K gate material and the metal material have a same thickness.
5. The device of claim 2 , wherein the layers of the first plurality of stacked gates and the layers of the second plurality of stacked gates have different thicknesses.
6. The device of claim 2 , wherein the layers of the first plurality of stacked gates and the layers of the second plurality of stacked gates have a same thickness.
7. The device of claim 1 , further comprising a plurality source-drain regions fully isolated from the substrate by the continuous buried oxide layer.
8. The device of claim 1 , wherein the first plurality of stacked gates and the second plurality of stacked gates have a same number of layers.
9. The device of claim 1 , wherein each stacked gate of the first plurality of stacked gates is disposed in a respective active area of a first region of the substrate.
10. The device of claim 1 , wherein each of the second plurality of stacked gates has a critical dimension less than about 15 nanometers.
11. The device of claim 1 , wherein the second plurality of stacked gates have a pitch of less than about 40 nanometers.
12. The device of claim 1 , wherein each of the first plurality of stacked gates has a critical dimension of at least 10 nanometers and each of the second plurality of stacked gates has a critical dimension less than about 10 nanometers.
13. A structure comprising:
a substrate having a first region and a second region;
a continuous buried oxide layer on the substrate; and
a plurality of nanosheet stacks disposed directly on the continuous buried oxide layer, wherein each of the nanosheet stacks comprises:
a silicon-germanium-on-insulator layer disposed directly on the continuous buried oxide layer;
a first metal layer on the silicon-germanium-on-insulator layer; and
a plurality of silicon-germanium layers disposed on the first metal layer and alternating with at least one additional metal layer,
wherein the plurality of nanosheet stacks each comprise:
a plurality of first nanosheet stacks having a first width in the first region; and
a plurality of second nanosheet stacks having a second width in the second region, wherein the first width is different than the second width.
14. The structure of claim 13 , wherein each of the first nanosheets are disposed in a respective active area of the first region.
15. The structure of claim 13 , wherein each of the second nanosheets has a critical dimension less than about 15 nanometers.
16. The structure of claim 15 , wherein the plurality of second nanosheets have a pitch of less than about 40 nanometers.
17. A method for forming a semiconductor device comprising:
providing a silicon-on-insulator (SOI) layer over a buried oxide layer and a substrate;
depositing a blanket silicon germanium (SiGe) layer on the SOI layer;
depositing an oxide layer on the silicon germanium;
performing a thermal anneal to diffuse germanium of the silicon germanium into the SOI layer and form a SiGe-On-Insulator (SGOI) layer;
removing the oxide layer;
depositing a SiGe/Si super lattice on the SGOI layer;
patterning a first portion of the SiGe/Si super lattice and the SGOI layer to form a first plurality of nanosheet stacks having a first width; and
patterning a second portion of the SiGe/Si super lattice and the SGOI layer to form a second plurality of nanosheet stacks having a second width, wherein the second width is less than the first width.
18. The method of claim 17 , further comprising:
forming a plurality of spacers supporting ends of a plurality of Si layers of the SiGe/Si super lattice;
removing a plurality of SiGe layers of the SiGe/Si super lattice; and
depositing a high-K gate material to form a plurality of gate-all-around structures including alternating layers of the high-K gate material and the plurality of Si layers, wherein the high-K gate material forms a full bottom gate on a bottom of the plurality of gate-all-around structures.
19. The method of claim 17 , further comprising thinning the SOI layer.
20. The method of claim 17 , wherein the deposition of the SiGe/Si super lattice is performed at a temperature of less than about 700 degrees Celsius.