Reducing voltage non-linearity in a bridge having tunneling magnetoresistance (TMR) elements
In one aspect, a magnetic field sensor includes a plurality of tunneling magnetoresistance (TMR) elements that includes a first TMR element, a second TMR element, a third TMR element and a fourth TMR element. The first and second TMR elements are connected to a voltage source and the third and fourth TMR elements are connected to ground. Each TMR element has a pillar count of more than one pillar and the pillar count is selected to reduce the angle error below 1.0°.
1. A magnetic field sensor, comprising:
a plurality of tunneling magnetoresistance (TMR) elements comprising a first TMR element, a second TMR element, a third TMR element and a fourth TMR element arranged in a bridge, wherein a voltage across each TMR element is constant, wherein the first and second TMR elements are connected to a voltage source;
a plurality of transistors comprising a first transistor, a second transistor, a third transistor and a fourth transistor, wherein each transistor is connected to another transistor and to a corresponding one of the first TMR element, the second TMR element, the third TMR element or the fourth TMR element;
a first amplifier, wherein an output of the first amplifier is connected to a base of the first transistor and the output of the first amplifier is connected to a base of the second transistor, wherein a first input of the first amplifier is connected to the first TMR element and a second input of the first amplifier is connected to the second TMR element; and
a second amplifier, wherein an output of the second amplifier is connected to a base of a third transistor and the output of the second amplifier is connected to a base of a fourth transistor, wherein a first input of the second amplifier is connected to the third TMR element and the second input of the second amplifier is connected to the fourth TMR element.
2. The magnetic field sensor of claim 1 , wherein the first and second transistors are each one of PNP BJT or a p-type metal oxide semiconductor field-effect transistor (MOSFET), and
the third and fourth transistors are each one of NPN BJT or a n-type MOSFET.
3. The magnetic field sensor of claim 1 , further comprising a current source connected to a third input of the first amplifier.
4. The magnetic field sensor of claim 3 , further comprising a resistor connected to the third input of the first amplifier.
5. The magnetic field sensor of claim 4 , wherein the current source and the resistor provide a reference voltage.
6. The magnetic field sensor of claim 5 , wherein the reference voltage is adjustable based on variations of one or more of the first to fourth TMR elements.
7. The magnetic field sensor of claim 1 , further comprising a current source connected to a third input of the second amplifier.
8. The magnetic field sensor of claim 7 , further comprising a resistor connected to the third input of the second amplifier.
9. The magnetic field sensor of claim 8 , wherein the current source and the resistor provide a reference voltage.
10. The magnetic field sensor of claim 9 , wherein the reference voltage is adjustable based on variations of one or more of the first to fourth TMR elements.
11. The magnetic field sensor of claim 1 , wherein each TMR element has a pillar count of more than thirty pillars.
12. The magnetic field sensor of claim 1 , wherein the bridge is a conductance bridge.
13. The magnetic field sensor of claim 1 , wherein the bridge provides a bipolar current.
14. The magnetic field sensor of claim 1 , wherein a reference direction of the first TMR element is opposite a reference direction of the second TMR element.
15. The magnetic field sensor of claim 14 , wherein the reference direction of the first TMR element is opposite a reference direction of the fourth TMR element.
16. The magnetic field sensor of claim 15 , wherein the reference direction of the first TMR element is equal to a reference direction of the third TMR element.
17. The magnetic field sensor of claim 1 , wherein each TMR element comprises a free layer that changes with an applied field and a reference layer that is fixed.
18. The magnetic field sensor of claim 1 , wherein the output of the first amplifier is connected to a base of the second transistor, wherein a second input of the first amplifier is connected to the second TMR element; and
a second amplifier, wherein the output of the second amplifier is connected to a base of the fourth transistor, wherein a second input of the second amplifier is connected to the fourth TMR element.
19. The magnetic field sensor of claim 1 , further comprising:
a third amplifier, wherein an output of the third amplifier is connected to a base of the second transistor, wherein a first input of the third amplifier is connected to the second TMR element; and
a fourth amplifier, wherein an output of the fourth amplifier is connected to a base of the fourth transistor, wherein a first input of the fourth amplifier is connected to the fourth TMR element.
20. A magnetic field sensor, comprising:
a plurality of tunneling magnetoresistance (TMR) elements comprising a first TMR element, a second TMR element, a third TMR element and a fourth TMR element arranged in a bridge, wherein a voltage across each TMR element is constant, wherein the first and second TMR elements are connected to a constant voltage source, wherein the third and fourth TMR elements are connected to ground, wherein the first and third TMR elements are connected to a first bridge node and the second and third TMR elements are connected to a second bridge node;
a first resistor connected to the first bridge node and a first output node;
a second resistor connected to the second bridge node and a second output node;
a first amplifier, wherein an output of the first amplifier is connected to the first output node and the first resistor, wherein a first input of the first amplifier is connected to the first bridge node and the first resistor; and
a second amplifier, wherein an output of the second amplifier is connected to the second output node and the second resistor, wherein a first input of the second amplifier is connected to the second bridge node and the second resistor, wherein a second input of the second amplifier is connected to a second input of the first amplifier.
21. The magnetic field sensor of claim 20 , wherein each TMR element has a pillar count of more than thirty pillars.
22. The magnetic field sensor of claim 20 , wherein the bridge is a conductance bridge.