Conductive Structures, Assemblies Having Vertically-Stacked Memory Cells Over Conductive Structures, and Methods of Forming Conductive Structures
Some embodiments include a conductive structure of an integrated circuit. The conductive structure includes an upper primary portion, with the upper primary portion having a first conductive constituent configured as a container. The container has a bottom, and a pair of sidewalls extending upwardly from the bottom. An interior region of the container is over the bottom and between the sidewalls. The upper primary portion includes a second conductive constituent configured as a mass filling the interior region of the container. The second conductive constituent is a different composition than the first conductive constituent. One or more conductive projections join to the upper primary portion and extend downwardly from the upper primary portion. Some embodiments include assemblies comprising memory cells over conductive structures. Some embodiments include methods of forming conductive structures.
1 - 28 . (canceled)
29 . A conductive structure of an integrated circuit, comprising:
a conductive container having a bottom and having a pair of sidewalk extending upwardly from the bottom;
a conductive projection extending downwardly from the bottom of the conductive container;
an interior region defined by the bottom and sidewalk of the conductive container; and
a conductive mass filling the interior region, the conductive mass comprising a different composition than the conductive container.
30 . The conductive structure of claim 29 wherein the conductive mass comprises at least one conductive material.
31 . The conductive structure of claim 29 wherein the conductive mass comprises only one conductive material.
32 . The conductive structure of claim 29 wherein the conductive mass comprises at least two conductive materials.
33 . The conductive structure of claim 29 wherein the conductive mass comprises at least three conductive materials.
34 . The conductive structure of claim 29 wherein the conductive mass comprises only three conductive materials.
35 . The conductive structure of claim 29 wherein the interior region is only defined by the bottom and sidewalls of the conductive container.
36 . The conductive structure of claim 29 wherein the interior region defined by the bottom and sidewalls of the conductive container comprises a first portion of the interior region, and further comprising a second portion of the interior region defined by the conductive projection.
37 . The conductive structure of claim 36 wherein the conductive mass fills the second portion of the interior region.
38 . The conductive structure of claim 37 wherein the conductive mass comprises at least one conductive material filling the second portion of the interior region.
39 . The conductive structure of claim 37 wherein the conductive mass comprises only one conductive material filling the second portion of the interior region.
40 . The conductive structure of claim 37 wherein the conductive mass comprises at least two conductive materials filling the second portion of the interior region.
41 . The conductive structure of claim 37 wherein the conductive mass comprises only two conductive materials filling the second portion of the interior region.
42 . The conductive structure of claim 29 wherein the conductive projection comprises two conductive projections extending downwardly from the bottom of the conductive container.
43 . The conductive structure of claim 42 wherein the two conductive projection define arcuate corners with the conductive container.
44 . The conductive structure of claim 29 wherein the conductive projection defines sharp corners with the conductive container.
45 . The conductive structure of claim 29 wherein the conductive projection defines arcuate corners with the conductive container.
46 . The conductive structure of claim 29 further comprising a planarized upper surface extending across the conductive container and the conductive mass.
47 . The conductive structure of claim 29 wherein the conductive container comprises a metal and the conductive mass comprises a semiconductor material.