Deposition system with multi-cathode and method of manufacture thereof
A deposition system, and a method of operation thereof, includes: a cathode; a shroud below the cathode; a rotating shield below the cathode for exposing the cathode through the shroud and through a shield hole of the rotating shield; and a rotating pedestal for producing a material to form a carrier over the rotating pedestal, wherein the material having a non-uniformity constraint of less than 1% of a thickness of the material and the cathode having an angle between the cathode and the carrier.
1. A chamber comprising:
a plurality of cathodes, each of the plurality of cathodes having a length and a volume a target below each of the plurality of cathodes, the target comprising material to be deposited on a carrier in a sputtering process;
a rotating shield below the plurality of the cathodes configured to expose one of the plurality of the cathodes through a shroud below the one of the plurality of the cathodes and through a shield hole of the rotating shield, the shield hole below the shroud, the shroud having a length that is greater than the length of the one of the plurality of the cathodes and the shroud having a volume that is greater than the volume of the one of the plurality of cathodes; and
a rotating pedestal configured to support the carrier.
2. The chamber of claim 1 , the shroud configured to contain a majority of the material from a target that does not deposit on the carrier during the sputtering process and to prevent cross-contamination between the plurality of the cathodes.
3. The chamber of claim 2 , further comprising a moveable magnet to provide an adjustable a magnet-to-target spacing between a magnet of the cathode and the target to improve uniformity of the material.
4. The chamber of claim 3 , wherein the cathode further comprises a swing arm configured to adjust an angle between a plane of the one of the plurality of the cathodes and a plane of the carrier.
5. The chamber of claim 4 , wherein the angle is adjustable in a range of 30 degrees to 50 degrees.
6. The chamber of claim 5 , wherein the shroud is configured so that at least 80% of the material from the target not deposited on the carrier is contained in the shroud.
7. The chamber of claim 4 , further comprising a linear slide located over the swing arm so that the swing arm can adjust the in 5 degree increments with respect to the carrier.
8. The chamber of claim 1 , comprising twelve cathodes and twelve targets.
9. The chamber of claim 8 , wherein the twelve targets comprise six inner race targets and six outer race targets.
10. The chamber of claim 8 , further comprising individual adjustments including a target-source height adjustment, an angular adjustment, and a magnet-target spacing adjustment mechanism.
11. The chamber of claim 8 , wherein the targets comprise different materials.
12. The chamber of claim 8 , further comprising a telescopic cover ring designed to provide for a telescopic deposition of the materials sputtered from the targets on the carrier.
13. The chamber of claim 12 , the telescopic cover ring surrounding the rotating pedestal.
14. The chamber of claim 13 , further comprising a deposition ring located below and in direct contact with the telescopic cover ring.
15. The chamber of claim 14 , further comprising an intermediate ring 1208 can be over the deposition ring.
16. The chamber of claim 15 , wherein the telescopic cover ring comprises an L-shaped structure.
17. The chamber of claim 1 , further comprising a direct current power supply.
18. The chamber of claim 1 , further comprising a radio frequency power supply.