IP Library › Granted Patent US 12,341,476
Granted Patent B2
US 12,341,476 · App. 17/506,752 · Granted Jun 24, 2025

Power amplifier circuit

Inventors: Masao Kondo (Nagaokakyo, JP); Yasunari Umemoto (Nagaokakyo, JP); Shaojun Ma (Nagaokakyo, JP); Shinnosuke Takahashi (Nagaokakyo, JP)
Assignee: Murata Manufacturing Co., Ltd.
H03F1/301H03F3/245H03F2200/447H03F2200/451
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,341,476
App. No.
17/506,752
Granted
Jun 24, 2025
Kind
B2
Abstract

A power amplifier circuit includes an amplification unit, a heating unit, and a control circuit. The amplification unit is configured to amplify a radio-frequency signal. The heating unit is provided adjacent to the amplification unit. The heating unit includes one or more transistors configured to generate heat that increases as the passing current increases. The control circuit is coupled to the one or more transistors. The control circuit is configured to increase the passing current when the environmental temperature is a predetermined threshold or lower.

Claims (42)

1. A power amplifier circuit comprising:

an amplification circuit configured to amplify a radio-frequency signal;

a heating circuit provided adjacent to the amplification circuit and including one or more heating elements configured to generate heat that increases as a passing current increases; and

a control circuit coupled to the heating elements, the control circuit including a reference-voltage generation circuit configured to generate a reference voltage, and the control circuit being configured to increase the passing current in accordance with an environmental temperature and the reference voltage.

2. The power amplifier circuit according to claim 1 , wherein

the control circuit includes a control-voltage generation circuit configured to generate a control voltage that increases as the environmental temperature decreases, and

the passing current passing through the one or more heating elements increases as the control voltage increases.

3. The power amplifier circuit according to claim 2 , wherein

the control-voltage generation circuit includes

a control transistor circuit including a control transistor having a base configured to receive the reference voltage, the control transistor being configured to output, in accordance with the environmental temperature and the reference voltage, the control voltage that increases as the environmental temperature decreases.

4. The power amplifier circuit according to claim 3 , wherein

each heating element is a unit transistor configured to output the passing current based on the control voltage.

5. The power amplifier circuit according to claim 3 , wherein

each heating element is a resistance element through which the passing current based on the control voltage passes.

6. The power amplifier circuit according to claim 1 , further comprising:

a chip having a major surface parallel to a plane defined by a first direction and a second direction crossing each other, wherein

the amplification circuit includes

an amplifier circuit configured to output an output signal obtained by amplifying the radio-frequency signal, and

a clamp circuit including one or more diodes provided between an output of the amplifier circuit and ground, the one or more diodes each having an anode coupled to an amplifier-circuit side and a cathode coupled to a ground side, the one or more diodes being provided at the chip and coupled in series with each other, and

the heating elements are provided at the chip and positioned adjacent to the diodes.

7. The power amplifier circuit according to claim 2 , further comprising:

a chip having a major surface parallel to a plane defined by a first direction and a second direction crossing each other, wherein

the amplification circuit includes

an amplifier circuit configured to output an output signal obtained by amplifying the radio-frequency signal, and

a clamp circuit including one or more diodes provided between an output of the amplifier circuit and ground, the one or more diodes each having an anode coupled to an amplifier-circuit side and a cathode coupled to a ground side, the one or more diodes being provided at the chip and coupled in series with each other, and

the heating elements are provided at the chip and positioned adjacent to the diodes.

8. The power amplifier circuit according to claim 3 , further comprising:

a chip having a major surface parallel to a plane defined by a first direction and a second direction crossing each other, wherein

the amplification circuit includes

an amplifier circuit configured to output an output signal obtained by amplifying the radio-frequency signal, and

a clamp circuit including one or more diodes provided between an output of the amplifier circuit and ground, the one or more diodes each having an anode coupled to an amplifier-circuit side and a cathode coupled to a ground side, the one or more diodes being provided at the chip and coupled in series with each other, and

the heating elements are provided at the chip and positioned adjacent to the diodes.

9. A power amplifier circuit comprising:

an output transistor configured to amplify a radio-frequency signal and output the radio-frequency signal, the output transistor being configured to generate heat that increases as a passing current increases;

a bias circuit configured to supply a bias current or voltage to the output transistor; and

a control circuit coupled to the bias circuit, the control circuit including a reference-voltage generation circuit configured to generate a reference voltage, and the control circuit being configured to increase the bias current or voltage in accordance with an environmental temperature and the reference voltage.

10. The power amplifier circuit according to claim 9 , wherein

the control circuit includes a control-voltage generation circuit configured to generate a control voltage that increases as the environmental temperature decreases, and

the passing current passing through the output transistor increases as the control voltage increases.

11. The power amplifier circuit according to claim 10 , wherein

the control-voltage generation circuit includes

a control transistor circuit including a control transistor having a base configured to receive the reference voltage, the control transistor being configured to output, in accordance with the environmental temperature and the reference voltage, the control voltage that increases as the environmental temperature decreases.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 21, 2021
From: KONDO, MASAO; UMEMOTO, YASUNARI; MA, SHAOJUN; TAKAHASHI, SHINNOSUKE
To: MURATA MANUFACTURING CO., LTD.
Reel/Frame 057859/0947 →
Priority Claims (1)
JP 2020-197253 · Nov 27, 2020 · national
Continuity (1)
Related Publication 20220173702A1 · Jun 2, 2022
References Cited (4)
US 20040150479A1 · Abe · 2004 [cited by examiner]
CN 103822728B · 2016 [cited by applicant]
CN 103825558B · 2016 [cited by applicant]
JP 2018142688A · 2018 [cited by applicant]