IP Library › Granted Patent US 11,835,763
Granted Patent B2
US 11,835,763 · App. 17/508,030 · Granted Dec 5, 2023

Nanoimprinted photonic integrated circuits

Inventors: Mark William Knight (El Segundo, CA); Stephanie Roxane Sandor-Leahy (El Segundo, CA); Lakshminarayanan Ravi Narasimhan (Redondo Beach, CA)
Assignee: NORTHROP GRUMMAN SYSTEMS CORPORATION
G02B6/136G02B2006/12038G02B2006/12061G02B2006/12176
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Quick Facts
Patent No.
US 11,835,763
App. No.
17/508,030
Granted
Dec 5, 2023
Kind
B2
Abstract

A method of making a photonic integrated circuit (PIC) is provided. The method comprises depositing a functional resist material layer over a substrate, disposing and pressing a stamp with a plurality of nanopatterns into the functional resist material for a period of time, and removing the stamp from the functional resist material to provide nanofeatures that are inverted versions of the nanopatterns, wherein the nanofeatures form one or more optical elements.

Claims (14)

1. A method of making a photonic integrated circuit (PIC), the method comprising:

depositing a functional resist material layer over a substrate;

disposing and pressing a stamp with a plurality of nanopatterns into the functional resist material for a period of time;

removing the stamp from the functional resist material to provide nanofeatures that are inverted versions of the nanopatterns, wherein the nanofeatures form one or more optical elements; and

depositing an encapsulation layer over the function resist material layer, the encapsulation layer having a lower refractive index than the functional resist material layer.

2. The method of claim 1 , further comprising heating the function resist material layer after the disposing and pressing and prior to the removing.

3. The method of claim 1 , further comprising ultra-violet (UV) curing the functional resist material layer after the disposing and pressing and prior to the removing.

4. The method of claim 1 , wherein the functional resist material is formed of a sol-gel.

5. The method of claim 4 , wherein the functional resist material is one of silica, titanium oxide (TiO 2 ), or titanium oxide particles or semiconductor particles embedded in a sol-gel.

6. The method of claim 1 , wherein the functional resist material has a refractive index greater than 1.7 and less than 4.0.

7. The method of claim 6 , wherein the substrate has a refractive index less than 1.5.

8. The method of claim 1 , wherein the stamp includes both centimeters, millimeters or micrometers patterns and nanometers patterns with one or more of the, centimeters, millimeters or micrometers patterns and nanometers patterns have varying heights that forms both centimeters, millimeters or micrometers features and nanometers features with one or more of the centimeters, millimeters or micrometers features and nanometers features have varying heights on the functional resist material.

9. The method of claim 1 , wherein the stamp is a soft polymeric stamp.

10. The method of claim 9 , wherein the stamp includes a soft or low modulus polydimethylsiloxane (PDMS) layer overlying a substrate, and a hard or high modulus PDMS layer overlying the low modulus polymer layer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 22, 2021
From: KNIGHT, MARK WILLIAM; SANDOR-LEAHY, STEPHANIE ROXANE; NARASIMHAN, LAKSHMINARAYANAN RAVI
To: NORTHROP GRUMMAN SYSTEMS CORPORATION
Reel/Frame 057875/0626 →
Continuity (1)
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