Method of making thin films of sodium fluorides and their derivatives by ALD
A method of making thin films of sodium fluorides and their derivatives by atomic layer deposition (“ALD”). A sodium precursor is exposed to a substrate in an ALD reactor. The sodium precursor is purged, leaving the substrate with a sodium intermediate bound thereon. A fluorine precursor is exposed to the bound sodium intermediate in the ALD reactor. The fluorine precursor is purged and a sodium fluoride film is formed on the substrate.
1. A method for deposition of sodium fluoride comprising:
providing a substrate;
performing an atomic layer deposition having:
a first half reaction exposing a sodium precursor to the substrate at a first half reaction temperature, forming a sodium intermediate; and
a second half reaction exposing a fluorine precursor to the sodium intermediate; and
reacting the sodium intermediate with the fluorine precursor forming a sodium fluoride coating on the substrate.
2. The method of claim 1 , wherein the substrate is silicon, quartz, ALO, carbon nanotubes, cathodes, or silicon oxide.
3. The method of claim 1 , wherein the sodium precursor is tert-butoxide.
4. The method of claim 3 , wherein the sodium intermediate is Na(O t Bu) 1−x .
5. The method of claim 1 , wherein the fluorine precursor is selected from the group consisting of sulfur tetrafluoride, ammonium fluoride, WF 6 , and/or Hf-pyridine.
6. The method of claim 1 , wherein the first half reaction temperature is 175-250° C.
7. The method of claim 1 , further comprising a first purge step after the first half reaction exposure, the first purge step including exposure of a purge gas to the substrate and purging the sodium precursor.
8. The method of claim 1 , further comprising a second purge step after the second half reaction exposure, the second purge step including exposure of a purge gas to the substrate and purging the fluorine precursor.
9. A method for deposition of sodium fluoride comprising:
providing a substrate;
performing an atomic layer deposition having:
a first half reaction exposing a sodium precursor to the substrate at a first half reaction temperature, forming a sodium intermediate; and
a second half reaction exposing a Hf-pyridine precursor to the sodium intermediate; and
reacting the sodium intermediate with the Hf-pyridine precursor forming a sodium fluoride coating on the substrate.
10. The method of claim 9 , wherein the substrate is silicon, quartz, ALO, carbon nanotubes, cathodes, or silicon oxide.
11. The method of claim 9 , wherein the sodium precursor is tert-butoxide.
12. The method of claim 11 , wherein the sodium intermediate is Na(O t Bu) 1−x .
13. The method of claim 9 , further comprising a first purge step after the first half reaction exposure, the first purge step including exposure of a purge gas to the substrate and purging the sodium precursor.
14. The method of claim 9 , further comprising a second purge step after the second half reaction exposure, the second purge step including exposure of a purge gas to the substrate and purging the fluorine precursor.
15. A method for deposition of sodium fluoride comprising:
providing a substrate;
performing an atomic layer deposition having:
a first half reaction exposing a sodium precursor to the substrate at a first half reaction temperature, forming a sodium intermediate; and
a second half reaction exposing a WF 6 precursor to the sodium intermediate; and
reacting the sodium intermediate with the WF 6 precursor forming a sodium fluoride coating on the substrate.
16. The method of claim 15 , wherein the substrate is silicon, quartz, ALO, carbon nanotubes, cathodes, or silicon oxide.
17. The method of claim 15 , wherein the sodium precursor is tert-butoxide.
18. The method of claim 17 , wherein the sodium intermediate is Na(O t Bu) 1−x .
19. The method of claim 15 , further comprising a first purge step after the first half reaction exposure, the first purge step including exposure of a purge gas to the substrate and purging the sodium precursor.
20. The method of claim 15 , further comprising a second purge step after the second half reaction exposure, the second purge step including exposure of a purge gas to the substrate and purging the fluorine precursor.