Electrode structure and photodetection element

Inventors: Tomohito Mizuno (Tokyo, JP); Takekazu Yamane (Tokyo, JP); Hideaki Fukuzawa (Tokyo, JP); Tetsuya Shibata (Tokyo, JP)

Assignee: TDK CORPORATION

H01L31/022466 H01L27/14643 H04B10/1143 H04B10/501 H04B10/691

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Quick Facts

Patent No.: US 11,869,989
App. No.: 17/509,730
Granted: Jan 9, 2024
Kind: B2

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Abstract

An electrode structure includes: a metal film with an opening formed in a part of the metal film; and a transparent conductive film disposed in the opening, wherein the transparent conductive film is electronically connected to an element and overlaps with the element as viewed in a plan view in a thickness direction of the transparent conductive film.

Claims (56)

1. An electrode structure comprising:

a metal film with an opening formed in a part of the metal film; and

a transparent conductive film disposed in the opening, wherein

the transparent conductive film is electronically connected to at least one magnetic element and overlaps with the at least one magnetic element as viewed in a plan view in a thickness direction of the transparent conductive film.

2. The electrode structure according to claim 1 , wherein the opening is formed so that the at least one magnetic element is positioned within the opening as viewed in the plan view in the thickness direction.

3. The electrode structure according to claim 1 , wherein a length of the opening is less than a wavelength of a light to be applied to the transparent conductive film.

4. The electrode structure according to claim 2 , wherein a length of the opening is less than a wavelength of a light to be applied to the transparent conductive film.

5. A photodetection element comprising;

a first electrode having the electrode structure and a second electrode; and

as the element, at least one magnetic element disposed between the first electrode and the second electrode, the at least one magnetic element including a first ferromagnetic layer, a second ferromagnetic layer and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, wherein

the electrode structure comprises:

a metal film with an opening formed in a part of the metal film; and

a transparent conductive film disposed in the opening, wherein

the transparent conductive film is electronically connected to the at least one magnetic element and overlaps with the at least one magnetic element as viewed in a plan view in a thickness direction of the transparent conductive film, and the transparent conductive film is configured to be irradiated with light.

6. The photodetection element according to claim 5 , wherein the opening is formed so that the magnetic element is positioned within the opening as viewed in the plan view in the thickness direction.

7. The photodetection element according to claim 5 , wherein a length of the opening is less than a wavelength of a light to be applied to the transparent conductive film.

8. The photodetection element according to claim 6 , wherein a length of the opening is less than a wavelength of a light to be applied to the transparent conductive film.

9. The photodetection element according to claim 5 , further comprising a light transmitter, wherein

the light transmitter comprises,

a first diffraction grating portion disposed on one end of the light transmitter and configured to be irradiated with light from an outside,

a second diffraction grating portion disposed on other end of the light transmitter and configured to output light transmitted from the first diffraction grating portion; and

a waveguide disposed between the first diffraction grating portion and the second diffraction grating portion, and

an area of the first diffraction grating portion is more than an area of the second diffraction grating portion as views in a plan view of the light transmitter.

10. The photodetection element according to claim 6 , further comprising a light transmitter, wherein

the light transmitter comprises,

a first diffraction grating portion disposed on one end of the light transmitter and configured to be irradiated with light from an outside,

a second diffraction grating portion disposed on other end of the light transmitter and configured to output light transmitted from the first diffraction grating portion; and

a waveguide disposed between the first diffraction grating portion and the second diffraction grating portion, and

an area of the first diffraction grating portion is more than an area of the second diffraction grating portion as views in a plan view of the light transmitter.

11. The photodetection element according to claim 7 , further comprising a light transmitter, wherein

the light transmitter comprises,

a first diffraction grating portion disposed on one end of the light transmitter and configured to be irradiated with light from an outside,

a second diffraction grating portion disposed on other end of the light transmitter and configured to output light transmitted from the first diffraction grating portion; and

a waveguide disposed between the first diffraction grating portion and the second diffraction grating portion, and

an area of the first diffraction grating portion is more than an area of the second diffraction grating portion as views in a plan view of the light transmitter.

12. The photodetection element according to claim 5 , wherein

the at least one magnetic element includes a plurality of magnetic elements arranged, and