Semiconductor device
A semiconductor device including a first oxide semiconductor layer, a first gate electrode opposing the first oxide semiconductor layer, a first gate insulating layer between the first oxide semiconductor layer and the first gate electrode, a first insulating layer covering the first oxide semiconductor layer and having a first opening, a first conductive layer above the first insulating layer and in the first opening, the first conductive layer being electrically connected to the first oxide semiconductor layer, and an oxide layer between an upper surface of the first insulating layer and the first conductive layer, wherein the first insulating layer is exposed from the oxide layer in a region not overlapping the first conductive layer in a plan view.
1. A semiconductor device comprising:
an oxide semiconductor layer;
a gate electrode opposing the oxide semiconductor layer;
a gate insulating layer between the oxide semiconductor layer and the gate electrode;
a first insulating layer covering the oxide semiconductor layer;
an oxide layer;
a first conductive layer above the first insulating layer; and
a first electrode arranged above the oxide semiconductor layer and contacting an upper surface of the oxide semiconductor layer,
wherein
the first conductive layer has a lower surface facing an upper surface of the first insulating layer,
the oxide layer is arranged between the upper surface of the first insulating layer and the first conductive layer, and directly contacting to the upper surface of the first insulating layer and the lower surface of the first conductive layer,
the first insulating layer have a first opening,
the oxide layer has a second opening overlapping the first opening in a plan view,
the first conductive layer is arranged in the first opening and the second opening,
the first conductive layer is electrically connected to the oxide semiconductor layer, and
the first conductive layer directly contacts the first electrode at a bottom part of the first opening.
2. The semiconductor device according to claim 1 , wherein the first insulating layer is exposed from the oxide layer in a region not overlapping the first conductive layer in a plan view.
3. The semiconductor device according to claim 2 , further comprising:
a second conductive layer on an opposite side to the first gate electrode with respect to the oxide semiconductor layer, the second conductive layer overlapping the oxide semiconductor layer in a plan view;
wherein
the first insulating layer is arranged between the oxide semiconductor layer and the second conductive layer, and
the oxide layer is arranged between the upper surface of the first insulating layer and the second conductive layer.
4. The semiconductor device according to claim 1 , wherein the gate electrode is arranged below the oxide semiconductor layer.
5. The semiconductor device according to claim 1 , wherein the gate electrode is arranged above the oxide semiconductor layer.
6. The semiconductor device according to claim 1 , wherein the first conductive layer contacts the oxide layer at a side wall of the second opening.
7. The semiconductor device according to claim 1 , wherein a pattern of the oxide layer is substantially the same pattern as a pattern of the first conductive layer in a plan view.
8. The semiconductor device according to claim 1 , wherein the oxide layer contains argon.
9. The semiconductor device according to claim 1 , wherein the first insulating layer is an oxide insulating layer,
the oxide layer is an oxide insulating layer with the same composition as the first insulating layer, and
a composition ratio of oxygen in the oxide layer is larger than a composition ratio of oxygen in the first insulating layer.