Silicon carbide magnetometer and associated material formation methods
A method for forming a silicon carbide material with a plurality of negatively charged silicon mono-vacancy defects includes irradiating a silicon carbide sample, annealing the irradiated silicon carbide sample in an annealing operation, and quenching the annealed silicon carbide sample. Quenching may include heating the annealed silicon carbide sample to a maximum temperature and quenching the annealed silicon carbide sample to form the silicon carbide sample with the plurality of negatively charged silicon mono-vacancy defects.
1. A method for forming a silicon carbide material with a plurality of negatively charged silicon mono-vacancy defects, the method comprising:
irradiating a silicon carbide sample to form an irradiated silicon carbide sample;
annealing the irradiated silicon carbide sample in an annealing operation to form an annealed silicon carbide sample; and
quenching the annealed silicon carbide sample, wherein the quenching comprises heating the annealed silicon carbide sample to a maximum temperature and quenching the annealed silicon carbide sample to form the silicon carbide sample with the plurality of negatively charged silicon mono-vacancy defects;
wherein the silicon carbide sample exhibits a photoluminescence spectra with zero photon lines at about 1445, 1440, and 1354 millielectronvolts at temperatures below 10 Kelvin.
2. The method of claim 1 , wherein the n-type SiC wafer is a four layer hexagonal polytype.
3. The method of claim 1 , wherein the plurality of negatively charged silicon mono-vacancy defects are point defects in a crystalline material of the silicon carbide sample the plurality of negatively charged silicon mono-vacancy defects.
4. The method of claim 1 , wherein irradiating the silicon carbide sample comprises neutron irradiating the silicon carbide sample.
5. A method for forming a silicon carbide material with a plurality of negatively charged silicon mono-vacancy defects, the method comprising:
irradiating a silicon carbide sample to form an irradiated silicon carbide sample;
annealing the irradiated silicon carbide sample in an annealing operation to form an annealed silicon carbide sample; and
quenching the annealed silicon carbide sample, wherein the quenching comprises heating the annealed silicon carbide sample to a maximum temperature and quenching the annealed silicon carbide sample to form the silicon carbide sample with the plurality of negatively charged silicon mono-vacancy defects,
wherein the silicon carbide sample with the plurality of negatively charged silicon mono-vacancy defects exhibits a shot noise sensitivity in a range of about 3.5 nT/√{square root over (Hz)} to 2.0 nT/√{square root over (Hz)}.
6. The method of claim 1 , wherein the annealing operation comprises cooling the irradiated silicon carbide sample to room temperature.
7. The method of claim 1 further comprising cutting or dicing a SiC substrate comprising a purity layer with a nitrogen doping below 5.0×10 14 cm −3 disposed on an n-type SiC wafer to form the silicon carbide sample prior to irradiating.
8. The method of claim 1 , wherein the silicon carbide sample with the plurality of negatively charged silicon mono-vacancy defects responds to a presence of a magnetic field with a change in photoluminescence.