Methods of designing layout of semiconductor device and methods for manufacturing semiconductor device using the same

1. A method of designing a layout of a semiconductor device, comprising:

preparing a standard cell library comprising information on standard cells;

determining a common active pattern in consideration of a local layout effect based on the standard cell library;

adding a common pattern region comprising the common active pattern to opposite sides of the standard cells, respectively; and

arranging the standard cells comprising the common pattern region,

wherein the standard cells comprise a first standard cell and a second standard cell that are adjacent to each other,

wherein, in the arranging the standard cells,

responsive to a width of the common active pattern being identical to a width of active patterns in the first and second standard cells, the common pattern region is arranged to overlap the first and second standard cells, and

responsive to the width of the common active pattern being different from the width of the active patterns in at least one of the first standard cell or the second standard cell, the common pattern region is arranged to be shared between the first and second standard cells.

2. The method of claim 1 , wherein the determining the common active pattern comprises:

determining a plurality of pattern arrangements in which candidate active patterns are arranged on opposite sides of the standard cells;

analyzing performance of the standard cells for each of the plurality of pattern arrangements; and

determining one of the candidate active patterns as the common active pattern in consideration of target characteristics of the standard cells.

3. The method of claim 2 , wherein the performance of the standard cells is at least one of an operation speed, a threshold voltage, or an amount of power consumption.

4. The method of claim 1 , wherein the common pattern region further comprises fin patterns that overlap the common active pattern.

5. The method of claim 1 , wherein each of the standard cells further comprises a gate pattern that intersects the active pattern, a diffusion break pattern cutting the active pattern, and contact patterns connected to the active pattern and the gate pattern.

6. The method of claim 5 , wherein the gate pattern is a plurality of gate patterns, and

wherein the common pattern region has a width corresponding to a pitch of the plurality of gate patterns.

7. The method of claim 5 , wherein the common pattern region does not comprise the diffusion break pattern.

8. The method of claim 1 , wherein the standard cells comprise an NFET portion and a PFET portion, respectively, and

wherein the common active pattern comprises a first common active pattern adjacent the NFET portion having a first width and a second common active pattern adjacent the PFET portion having a second width, different from the first width.

9. The method of claim 1 , wherein arranging the common pattern region to overlap the first standard cell comprises forming the common active pattern of the common pattern region and the active pattern in the first standard cell of a same active pattern.

10. The method of claim 1 , wherein the standard cells comprise two or more standard cells having different cell heights.

11. The method of claim 1 , wherein at least one of the standard cells comprises a multi-bridge channel FET (MBCFET®).