Interconnect structures and methods for forming same
A method for forming an interconnect structure in an element is disclosed. The method can include patterning a cavity in a non-conductive material. The method can include exposing a surface of the cavity in the non-conductive material to a surface nitriding treatment. The method can include depositing a conductive material directly onto the treated surface after the exposing.
1 . An element comprising an interconnect structure, the interconnect structure comprising:
a non-conductive semiconductor material comprising a primary region and an interface region;
a conductive material provided directly over the non-conductive semiconductor material with the interface region between the conductive material and the primary region;
wherein of the non-conductive semiconductor material only the non-conductive semiconductor material of the interface region is nitridized; and
wherein an amount of nitrogen varies through a depth of the interface region between the primary region and the conductive material.
2 . The element of claim 1 , wherein the non-conductive semiconductor material comprises a silicon based material.
3 . The element of claim 2 , wherein the conductive material comprises copper.
4 . The element of claim 2 , wherein the interface region comprises silicon and nitrogen.
5 . The element of claim 1 , wherein the amount of nitrogen is maximized at a boundary with the conductive material.
6 . The element of claim 1 , wherein the non-conductive semiconductor material is patterned with one or more sidewalls that define one or more cavities, the interface region disposed along the sidewalls of the one or more cavities.
7 . The element of claim 1 , wherein no barrier layer is disposed between the non-conductive semiconductor material and the conductive material.
8 . The element of claim 1 , wherein a width of the interface region is less than 10 nm.
9 . The element of claim 8 , wherein the width of the interface region is less than 5 nm.
10 . A method for forming an interconnect structure in an element, the method comprising:
forming one or more cavities by patterning a non-conductive semiconductor material;
exposing one or more surfaces of the patterned non-conductive semiconductor material to a plasma comprising a surface-treating species;
forming a conductive material at least partially filling the treated surfaces of the patterned non-conductive semiconductor material; and
forming a planar surface by removing portions of the conductive and non-conductive semiconductor materials.
11 . The method of claim 10 , comprising exposing the one or more surfaces of the patterned non-conductive semiconductor material to a nitrogen-containing plasma.
12 . The method of claim 10 , comprising forming the conductive material over the treated surfaces without an intervening conductive barrier layer between the conductive material and the non-conductive semiconductor material.
13 . The method of claim 10 , wherein the conductive material has a resistivity in a range of 1.5 micro ohm-cm to 50 micro ohm-cm.
14 . The method of claim 10 , wherein the conductive material fills at least 50% of depth of the one or more cavities.
15 . A method for forming an interconnect structure in an element, the method comprising:
providing a non-conductive semiconductor material having a cavity;
exposing a surface of the cavity in the non-conductive semiconductor material to a surface nitriding treatment;
depositing a conductive material onto the treated surface after the exposing;
planarizing the conductive material to remove unwanted materials including portions of the non-conductive semiconductor material;
providing a protective layer over the planarized conductive material and non-conductive semiconductor material; and
removing a portion of the protective layer that is disposed over the planarized conductive material.
16 . The method of claim 15 , wherein:
the surface nitriding treatment is a first surface nitriding treatment, and
the method further comprises:
providing a second non-conductive semiconductor material over the non-conductive semiconductor material and the conductive material;
patterning a second cavity in the second non-conductive semiconductor material;
exposing a second surface of the second cavity in the second non-conductive semiconductor material to a second surface nitriding treatment; and
depositing a second conductive material onto the second treated surface after the exposing the second surface.
17 . The method of claim 16 , further comprising:
exposing an upper surface of the non-conductive semiconductor material to an intervening nitriding treatment before providing the second non-conductive semiconductor material; and
providing the second non-conductive semiconductor material on the treated upper surface.
18 . The method of claim 15 , further comprising patterning the non-conductive semiconductor material prior to exposure to the surface nitriding treatment.
19 . The method of claim 15 , wherein the non-conductive semiconductor material comprises a silicon based material.
20 . The method of claim 15 , further comprising, before exposing the surface to the surface nitriding treatment, treating the surface with one or more of carbon (C), boron (B), cobalt (Co), and manganese (Mn).
21 . An element comprising an interconnect structure, the interconnect structure comprising:
a semiconductor material comprising a primary region and an interface region, wherein the semiconductor material is silicon;
a conductive material provided directly over the semiconductor material with the interface region between the conductive material and the primary region;
wherein of the semiconductor material only the semiconductor material of the interface region is nitridized; and
wherein an amount of nitrogen varies through a depth of the interface region between the primary region and the conductive material.