Diamonds and hetero-epitaxial methods of forming diamonds

1. A method of forming a plurality of diamonds, the method comprising:

providing a base;

epitaxially forming a first sacrificial layer on the base, the first sacrificial layer having a first material composition;

epitaxially forming a first diamond layer on the first sacrificial layer, the first diamond layer being a material that is different from the first material composition;

epitaxially forming a second sacrificial layer on the first diamond layer, the second sacrificial layer having the first material composition;

the first sacrificial layer, and the first diamond layer defining repeating layers of a heteroepitaxial super-lattice;

epitaxially forming a second diamond layer on the second sacrificial layer; and

separating the first and second diamond layers from the first and second sacrificial layers to produce free standing, single crystal diamonds.

2. The method as defined by claim 1 wherein separating comprises using a wet etch to etch away at least a portion of the first material.

3. The method as defined by claim 1 further comprising:

epitaxially forming a third sacrificial layer on second diamond layer, the third sacrificial layer having the first material composition;

epitaxially forming a third diamond layer on the third sacrificial layer, the third diamond layer being a material that is different from the first material composition.

4. The method as defined by claim 1 wherein the first material composition comprises iridium, titanium, or both iridium and titanium.

5. The method as defined by claim 1 wherein the base comprises one or more of magnesium oxide, iridium, silicon, silicon carbide, or diamond.

6. The method as defined by claim 1 wherein the first and second sacrificial layers are a single crystal.

7. The method as defined by claim 1 wherein epitaxially forming the first sacrificial layer comprises using atomic-layer deposition, physical vapor deposition, and/or chemical vapor deposition.

8. The method as defined by claim 1 wherein the first diamond layer has a thickness of between about 10 and 1000 microns and the second diamond layer has a thickness of between about 10 and 1000 microns.

9. The method as defined by claim 1 further comprising providing a substrate holder, providing the base comprising providing the base within the substrate holder, the substrate holder limiting the width of the epitaxially formed diamond layers.

10. A heteroepitaxial super-lattice comprising:

a first sacrificial layer on a base comprising a base material composition, the first sacrificial layer epitaxially formed using the crystal structure of the base and having a first material composition;

a first diamond layer on the first sacrificial layer, the first diamond layer epitaxially formed using the crystal structure of the first sacrificial layer and being a material that is different from the first material composition, the first diamond layer having a thick ness of between about 10 microns and 1000 microns;

a second sacrificial layer on the first diamond layer, the second sacrificial layer having the first material composition; and

a second diamond layer on the second sacrificial layer, the second diamond layer being a material that is different from the first material composition, the second diamond layer having a thickness of between about 10 microns and about 1000 microns.

11. The heteroepitaxial super-lattice as defined by claim 10 wherein the base is a single crystal material.

12. The heteroepitaxial super-lattice as defined by claim 10 wherein the base comprises one or more of magnesium oxide, iridium, silicon, silicon carbide, or diamond.

13. The heteroepitaxial super-lattice as defined by claim 10 wherein the first material composition comprises iridium, titanium, or both iridium and titanium.

14. The heteroepitaxial super-lattice as defined by claim 10 further comprising a substrate holder having a recess, the base, first sacrificial layer and first diamond layer being within the recess of the substrate holder, the substrate holder limiting the width of the epitaxially formed diamond layers.

15. A method of forming a plurality of diamonds, the method comprising:

providing a substrate holder with a cavity containing a base, the base comprising a base material composition;

epitaxially forming a first sacrificial layer on the base and within the cavity, the first sacrificial layer having a first material composition;

epitaxially forming a first diamond layer on the first sacrificial layer within the cavity, the first diamond layer being a material that is different from the first material composition;

epitaxially forming a second sacrificial layer on the first diamond layer within the cavity, the second sacrificial layer being the first material composition;

epitaxially forming a second diamond layer on the second sacrificial layer within the cavity,

the first sacrificial layer, the first diamond layer, the second sacrificial layer, and the second diamond layer being part of a heteroepitaxial super-lattice; and

separating the first and second diamond layers from the first and second sacrificial layers to produce free standing, single crystal diamonds.

16. The method as defined by claim 15 wherein said providing a base comprises forming a base within the cavity of the substrate holder.

17. The method as defined by claim 15 wherein said providing a base comprises receiving a base already formed within the cavity of the substrate holder.

18. The heteroepitaxial super-lattice as defined by claim 10 further comprising:

a third sacrificial layer on the second diamond layer, the third sacrificial layer having the first material composition; and

a third diamond layer on the third sacrificial layer, the third diamond layer being a material that is different from the first material composition.