Method for manufacturing image display device and image display device
A method for manufacturing an image display device includes: providing a semiconductor growth substrate comprising a semiconductor layer on a first substrate, the semiconductor layer comprising a light-emitting layer; providing a second substrate comprising a circuit, wherein the circuit comprises a circuit element; forming a light-shielding layer on the second substrate; forming an insulating film on the light-shielding layer; bonding the semiconductor layer to the second substrate on which the insulating film is formed; forming a light-emitting element by etching the semiconductor layer; forming an insulating layer that covers the light-emitting element; and electrically connecting the light-emitting element to the circuit element. The light-shielding layer is located between the light-emitting element and the circuit element. In a plan view, the light-shielding layer covers the circuit element.
1. A method for manufacturing an image display device, the method comprising:
providing a semiconductor growth substrate comprising a semiconductor layer on a first substrate, the semiconductor layer comprising a light-emitting layer;
providing a second substrate comprising a circuit and a first wiring layer, wherein the circuit comprises a circuit element, and the first wiring layer is electrically connected to the circuit element;
forming a light-shielding layer on the second substrate;
forming an insulating film on the light-shielding layer;
bonding the semiconductor layer to the second substrate on which the insulating film is formed;
forming a light-emitting element by etching the semiconductor layer;
forming an insulating layer that covers the light-emitting element; and
electrically connecting the light-emitting element to the circuit element, wherein:
the light-shielding layer is located between the light-emitting element and the first wiring layer, and
in a plan view, the light-shielding layer covers the circuit element.
2. The method for manufacturing the image display device according to claim 1 , further comprising:
before the step of bonding the semiconductor layer to the second substrate, removing the first substrate.
3. The method for manufacturing the image display device according to claim 1 , further comprising:
after the step of bonding the semiconductor layer to the second substrate, removing the first substrate.
4. The method for manufacturing the image display device according to claim 1 , wherein:
the semiconductor layer comprises an n-type semiconductor layer, the light-emitting layer, and a p-type semiconductor layer, stacked in this order from a first substrate side.
5. The method for manufacturing the image display device according to claim 1 , wherein:
the step of electrically connecting the light-emitting element to the circuit element comprises forming a via that extends through the insulating layer, the insulating film, and the light-shielding layer.
6. The method for manufacturing the image display device according to claim 1 , further comprising:
exposing a surface of the light-emitting element from under the insulating layer.
7. The method for manufacturing the image display device according to claim 6 , further comprising:
forming a transparent electrode at an exposed surface of the exposed light- emitting element.
8. The method for manufacturing the image display device according to claim 1 , wherein:
the first substrate comprises silicon or sapphire.
9. The method for manufacturing the image display device according to claim 1 , wherein:
the semiconductor layer comprises a gallium nitride compound semiconductor, and
the second substrate comprises silicon.
10. The method for manufacturing the image display device according to claim 1 , further comprising:
forming a wavelength conversion member on the light-emitting element.