Electrostatic discharge protection device with silicon controlled rectifier protection circuit
An electrostatic discharge (ESD) protection device, incudes an N-type well and a P-type well formed in a semiconductor substrate; a first N-type diffusion region and a first P-type diffusion region formed in the N-type well, separated by a first separation film, and each connected to an Anode terminal; a second N-type diffusion region and a second P-type diffusion region formed in the P-type well, separated by a second separation film, and each connected to a Cathode terminal; a P-type floating region, formed in the P-type well, spaced apart from the second N-type diffusion region and the second P-type diffusion region; and a non-sal layer covering the P-type floating region.
1. An ESD protection device, comprising;
an N-type well formed in a semiconductor substrate;
first and second P-type wells formed on opposite sides of the N-type well;
a first N-type diffusion region formed in the N-type well;
first and second P-type diffusion regions, each formed on opposite sides of the first N-type diffusion region in the N-type well;
a second N-type diffusion region and a third P-type diffusion region formed in each of the first and second P-type wells;
a P-type floating region formed in each of the first and second P-type wells,
wherein a width of the first N-type diffusion region is formed wider than a width of the second N-type regions;
a third separation film disposed between the N-type well and each of the first and second P-type wells, the third separation film being insulative; and
a single continuous non-sal layer disposed on each of the first and second P-type wells from the third separation film to the second N-type diffusion region and covering the respective P-type floating regions,
wherein each of the P-type floating regions is disposed spaced apart from its respective third separation film.
2. The ESD protection device of claim 1 , further comprising
a silicide film formed on the first N-type diffusion region;
a single continuous second non-sal layer disposed from the silicide film to the first P-type diffusion region and covering one portion of the first N-type diffusion region; and
a single continuous third non-sal layer from the silicide film to the second P-type diffusion region and covering another portion of the first N-type diffusion region.
3. The ESD protection device of claim 1 ,
wherein the first N-type diffusion region and the first and second P-type diffusion regions, connected with an Anode terminal, are separated by first separation films.
4. The ESD protection device of claim 1 ,
wherein the second N-type diffusion region and the third P-type diffusion region, connected with a respective Cathode terminal, are separated by a respective second separation film.
5. The ESD protection device of claim 1 , further comprising;
a deep P-type well in the substrate; and
an N-type drift region, a first P-type body region and a second P-type body region formed in the deep P-type well,
wherein the N-type well overlaps the N-type drift region, and
wherein the first and second P-type wells overlap the first and second P-type body regions, respectively.
6. The ESD protection device of claim 1 , further comprising:
a resistor connected in the third P-type diffusion region,
wherein the resistor is formed of poly-silicon.