Patent Assignment
Reel/Frame 066794/0290
Change of Name
Recorded: 2024-03-12
Pages: 25
Assignor
KEY FOUNDRY CO., LTD.
Executed: 2024-01-30
Assignee
SK KEYFOUNDRY INC.
215, DAESIN-RO, HEUNGDEOK-GU, CHUNGCHEONGBUK-DO, CHEONGJU-SI, 28429, KOREA, REPUBLIC OF
Covered Properties
(274)
Modulator of Phase Shift Keying (Psk) Type
Plate for Forming Metal Wires and Method of Forming Metal Wires Using the Same
Method of Forming Isolation Films in Semiconductor Devices
Method for Forming Isolation Film for Semiconductor Devices
Method of Forming Metal Line Layer in Semiconductor Device
Method for Forming Isolation Layer of Semiconductor Device
Method for Fabricating Merged Logic Cmos Device
Method for Manufacturing a Nonvolatile Memory Transistor
Method for Manufacturing a Semiconductor Device
Test Pattern of Semiconductor Device
Method for Fabricating Semiconductor Device
Method for Forming Low-K Dielectric Layer of Semiconductor Device
Method of Manufacturing Semiconductor Device
Radio Frequency Semiconductor Device and Method of Manufacturing the Same
Method for Forming Metal Wires in Semiconductor Device
Method for Forming Inductor in Semiconductor Device
Radio Frequency Integrated Circuit, and Method for Manufacturing the Same
Method for Forming Inductor in Semiconductor Device
Method for Forming Interlayer Insulation Film in Semiconductor Device
Cmos Output Buffer Circuit
Test Pattern for Reliability Measurement of Copper Interconnection Line Having Moisture Window and Method for Manufacturing the Same
Nonvolatile Memory Device and Method for Manufacturing the Same
Method for Manufacturing a Non-Volatile Memory Device
Method of Improving Residue and Thermal Characteristics of Semiconductor Device
Method of Forming Metal Wiring for High Voltage Element
Device for Electrostatic Discharge Protection and Circuit Thereof
Device for Electrostatic Discharge Protection and Method of Manufacturing the Same
Generator for Supplying Reference Voltage and Reference Current of Stable Level Regardless of Temperature Variation
Method of Manufacturing Semiconductor Device
Structure of Dummy Pattern in Semiconductor Device
Method for Removing Photoresist Layer and Method for Forming Metal Line in Semiconductor Device Using the Same
Flash Cell Using a Piezoelectric Effect
Parallel Capacitor of Semiconductor Device
Wafer Alignment Method
Semiconductor Device Manufacturing Method
Method for Manufacturing and Operating a Non-Volatile Memory
Non-Volatile Memory Device and Method for Fabricating the Same
Electrostatic Discharge Protection Device
Method for Fabricating Semiconductor Device
Method for Fabricating Module of Semiconductor Chip
Method for Fabricating Semiconductor Device
Electro-Static Discharge Protection Circuit and Method for Fabricating the Same
Non-Volatile Memory Device Having Selection Gates Formed on the Sidewalls of Dielectric Layers
Method for Fabricating Semiconductor Device
Device for Electrostatic Discharge Protection and Method of Manufacturing the Same
System and Method for Differential Efuse Sensing Without Reference Fuses
Semiconductor Device
Esd Protection Circuit
Non-Volatile Memory Device
Epitaxial silicon wafer and method for fabricating the same
Semiconductor Integrated Circuit
High Power Device Isolation and Integration
Structure for Differential Efuse Sensing Without Reference Fuses
Transistor Having Recess Channel and Fabricating Method Thereof
High Voltage Device
Non-Volatile Memory Device and Method for Fabricating the Same
Method of Forming Metal Wiring of Semiconductor Device
Patent:
41,653 →
Application:
12/284,848 →
Esd Protection Circuit
Semiconductor Device with Deep Trench Structure
Method of Manufacturing Semiconductor Device Including Forming a T-Shape Gate Electrode
Method for Forming Gate Oxide of Semiconductor Device
Method for Forming Gate of Semiconductor Device
Silicon Wafer and Fabrication Method Thereof
Insulator, Capacitor with the Same and Fabrication Method Thereof, and Method for Fabricating Semiconductor Device
Electrostatic Discharge Protection Device and Method for Manufacturing the Same
Capacitor Structure
Capacitor and Method for Fabricating the Same
Nonvolatile Memory Cell and Method for Fabricating the Same
Method for Forming Deep Trench in Semiconductor Device
High Power Device Isolation and Integration
Transistor Having Recess Channel and Fabricating Method Thereof
Semiconductor Device
Semiconductor Device
Semiconductor Device
Semiconductor Device
Semiconductor Device and Method for Fabricating Semiconductor Device
Semiconductor Device and Method for Fabricating the Same
Schottky Diode and Method for Fabricating the Same
Semiconductor Device for Preventing Crack in Pad Region and Fabricating Method Thereof
Method for Forming Gate Oxide of Semiconductor Device
Semiconductor Device and Manufacturing Method Thereof
Nonvolatile Memory Device and Method for Fabricating the Same
Semiconductor Device with Mim Capacitor and Method for Manufacturing the Same
Element Isolation Structure of Semiconductor and Method for Forming the Same
Silicon Wafer and Fabrication Method Thereof
Semiconductor Device and Method of Fabricating the Same
Semiconductor Device
Semiconductor Device and Method for Fabricating the Same
Electro-Static Discharge Protection Device
Non-Volatile Memory Device and Method for Fabricating the Same
Capacitor and Method for Fabricating the Same
Isolation Structure, Semiconductor Device Having the Same, and Method for Fabricating the Isolation Structure
Nonvolatile Memory Device and Method of Manufacturing Thereof
High Voltage Semiconductor Device
Metal Wiring of Semiconductor Device and Method for Manufacturing the Same
High Voltage Device and Method for Fabricating the Same
Silicon Wafer and Fabrication Method Thereof
Semiconductor Device and Method for Fabricating the Same
Electrical Fuse and Method of Fabricating the Same
Semiconductor Device
Semiconductor Device
Semiconductor Device
Semiconductor Device and Method for Fabricating Semiconductor Device
Method for Wafer Level Reliability
Semiconductor Device and Manufacturing Method Thereof
Semiconductor-Based Hall Sensor
Lateral Double-Diffused Mos Transistor Having Deeper Drain Region Than Source Region
Semiconductor Device and Manufacture Method Thereof
Semiconductor Power Device and Method of Fabricating the Same
Esd Transistor
Esd Transistor for High Voltage and Esd Protection Circuit Thereof
Semiconductor Device and Manufacturing Method Thereof
Semiconductor Device
Semiconductor Device and Manufacturing Method Thereof
Semiconductor Device
Non-Volatile Memory Device Having Asymmetrical Control Gates Surrounding a Floating Gate and Manufacturing Method Thereof
Method of Fabricating a Ldmos Device Having a First Well Depth Less Than a Second Well Depth
Method for Fabricating a Shorttky Diode Including a Guard Ring Overlapping an Insolation Layer
A Semiconductor Device Having Circuitry Positioned Above a Buried Magnetic Sensor
Low-Cost Semiconductor Device Manufacturing Method
Method of Manufacturing Non-Volatile Memory Device
Vertical Bipolar Junction Transistor and Manufacturing Method Thereof
Capacitor Type Humidity Sensor
Vertical Hall Sensor, Hall Sensor Module and Method for Manufacturing the Same
Humidity Sensor with Void Within Interconnect and Method of Manufacturing the Same
Semiconductor Device with Voids Within Silicon-on-Insulator (Soi) Structure and Method of Forming the Semiconductor Device
Hall Sensor with Improved Doping Profile
Patent:
9,299,919 →
Application:
14/625,648 →
Semiconductor and Method of Fabricating the Same
Insulator, Capacitor with the Same and Fabrication Method Thereof, and Method for Fabricating Semiconductor Device
Semiconductor Device and Method of Fabricating the Same
Isolation Structure, Semiconductor Device Having the Same, and Method for Fabricating the Isolation Structure
Semiconductor Device
Method of Manufacturing Non Volatile Memory Device
Semiconductor Structure Having a Junction Field Effect Transistor and a High Voltage Transistor and Method for Manufacturing the Same
Schottky Diode Having Floating Guard Rings
Level Shifter and Non-Volatile Memory Device Using the Same
Metal Wiring of Semiconductor Device and Method for Manufacturing the Same
Semiconductor Device for Preventing Crack in Pad Region and Fabricating Method Thereof
Semiconductor Device with Voids Within Silicon-on-Insulator (Soi) Structure and Method of Forming the Semiconductor Device
One Time Programmable Non-Volatile Memory Device
Method for Wafer Level Reliability
Semiconductor and Method of Fabricating the Same
Method of Manufacturing a Cmos Transistor
Single Poly Non-Volatile Memory Device, Method of Manufacturing the Same and Single Poly Non-Volatile Memory Device Array
Method of Fabricating Dmos and Cmos Transistors
Patent:
9,859,168 →
Application:
15/408,200 →
Integrated Semiconductor Device and Method for Manufacturing the Same
Display Driver Semiconductor Device and Manufacturing Method Thereof
Low-Cost Semiconductor Device Manufacturing Method
Semiconductor Device
Integrated Semiconductor Device Having Isolation Structure for Reducing Noise
Display Driver Semiconductor Device and Manufacturing Method Thereof
Method of Fabricating Dmos and Cmos Transistors
High Voltage Semiconductor Device
Semiconductor Device and Manufacturing Method Thereof
Semiconductor Structure Having a Junction Field Effect Transistor and a High Voltage Transistor and Method for Manufacturing the Same
Semiconductor Device Having Circuitry Positioned Above a Buried Magnetic Sensor
Tie-High and Tie-Low Circuits
Semiconductor Device Comprising Schottky Barrier Diodes
Decoupling Capacitor Circuit
Semiconductor Device Having a Deep-Trench Capacitor Including Void and Fabricating Method Thereof
Integrated Semiconductor Device Having Isolation Structure for Reducing Noise
Method of Manufacturing a Cmos Transistor
Power Semiconductor Device and Method for Manufacturing the Same
Semiconductor Device with High Voltage Field Effect Transistor and Junction Field Effect Transistor
Single Poly Multi Time Program Cell and Method of Operating the Same
Integrated Semiconductor Device and Method for Manufacturing the Same
Semiconductor Device and Method for Manufacturing the Same
Insulator, Capacitor with the Same and Fabrication Method Thereof, and Method for Fabricating Semiconductor Device
Single Poly Non-Volatile Memory Device, Method of Manufacturing the Same and Single Poly Non-Volatile Memory Device Array
Method of Manufacturing a Cmos Transistor
Semiconductor Device and Manufacturing Method Thereof
Semiconductor Device Having Deep Trench Structure and Method of Manufacturing Thereof
Semiconductor Device
High Voltage Semiconductor Device
Semiconductor and Method of Fabricating the Same
Display Driver Semiconductor Device and Manufacturing Method Thereof
Semiconductor Device with Controllable Channel Length and Manufacturing Method Thereof
Semiconductor Device with Electrostatic Discharge Protection
Semiconductor Device Comprising Schottky Barrier Diodes
Integrated Semiconductor Device and Method for Manufacturing the Same
Nonvolatile Memory Device
Semiconductor Device with Controllable Channel Length and Manufacturing Method of Semiconductor Device with Controllable Channel Length
Semiconductor Device Including Nonvolatile Memory Device and Logic Device and Manufacturing Method of Semiconductor Device Including Nonvolatile Memory Device and Logic Device
High Voltage Semiconductor Device and Manufacturing Method of High Voltage Semiconductor Device
Semiconductor Device Having a Diode Type Electrical Fuse (E-Fuse) Cell Array
Manufacturing Method of Semiconductor Device Using Gate-Through Implantation
Electronic Fuse Cell Array Structure
Single Poly Non-Volatile Memory Device, Method of Manufacturing the Same and Single Poly Non-Volatile Memory Device Array
Semiconductor Device Having Deep Trench Structure and Method of Manufacturing Thereof
High Voltage Semiconductor Device Having Bootstrap Diode
Single Poly Non-Volatile Memory Device, Method of Manufacturing the Same and Single Poly Non-Volatile Memory Device Array
Semiconductor Device Having Vertical Dmos and Manufacturing Method Thereof
Semiconductor Device Having a Diode Type Electrical Fuse (E-Fuse) Cell Array
Semiconductor and Method of Fabricating the Same
High Voltage Semiconductor Device and Manufacturing Method of High Voltage Semiconductor Device
Semiconductor Device Having a High Breakdown Voltage Capacitor and Method for Forming the Same
Display Driver Semiconductor Device and Method for Manufacturing the Same
High Voltage Semiconductor Device and Manufacturing Method Thereof
Structure and Method for Manufacturing a Trench Power Mosfet
Semiconductor Device with Cmos Process Based Hall Sensor and Manufacturing Method
Semiconductor Device Manufacturing Method
Semiconductor Device Having Low on-Resistance and Low Parasitic Capacitance
Electrostatic Discharge Protection Device with Silicon Controlled Rectifier Protection Circuit
Split Gate Power Mosfet and Split Gate Power Mosfet Manufacturing Method
Semiconductor Device with Non-Volatile Memory Cell and Manufacturing Method Thereof
Semiconductor Device with Single Poly Non-Volatile Memory Device and Manufacturing Method
Mask-Programmable Read Only Memory with Electrically Isolated Cells
Electrical Fuse One Time Programmable (Otp) Memory
Non-Volatile Memory Octo Mode Program and Erase Operation Method with Reduced Test Time
Multi Time Program Device with Power Switch and Non-Volatile Memory
Analog-To-Digital Converter and Operation Method Thereof
Semiconductor Device Including Poly-Silicon Junction Field-Effect Transistor and Manufacturing Method Thereof
Low-Power Retention Flip-Flop
Semiconductor Device with Junction Fet Transistors Having Multi Pinch-Off Voltages
Semiconductor Device with Metal-Insulator-Metal (Mim) Capacitor Having Lower Electrode Forms a Mesh Structure
Application:
17/558,253 →
Publication:
US US20230020162A1
Semiconductor Device with Deep Trench Isolation Mask Layout
Non-Volatile Memory Device Including Selection Gate and Manufacturing Method Thereof
High Voltage Semiconductor Device with Esd Self-Protection Capability and Manufacturing Method Thereof
Single Poly Non-Volatile Memory Device and Manufacturing Method Thereof
Negative Voltage Switching Device and Non-Volatile Memory Device Using the Same
Method of Manufacturing a Trench Capacitor with Wafer Bow
Semiconductor Device with High-Resistance Polysilicon Resistor Formation Method
Manufacturing Method of Non-Volatile Memory Device Having Uniform Dielectric Film Profile
Semiconductor Device with Guard Ring Isolating Power Device
eFUSE ONE-TIME PROGRAMMABLE MEMORY WITH INTER INTEGRATED CIRCUIT (I2C) COMMUNICATION AND OPERATION METHOD THEREOF
Semiconductor Device Including Nonvolatile Memory Device and Logic Device and Manufacturing Method of Semiconductor Device Including Nonvolatile Memory Device and Logic Device
Embedded Flash Memory and Write Operation Method Thereof
Manufacturing Method for Deep Trench Capacitor with Scalloped Profile
Semiconductor Device with Digital Isolator Capacitor and Manufacturing Method Thereof
Semiconductor Device with Controllable Channel Length and Manufacturing Method Thereof
Low Power Retention Flip-Flop
Semiconductor Device Having a Diode Type Electrical Fuse (E-Fuse) Cell Array
Non-Volatile Memory Device with Parallel Programming
Semiconductor Device with Bootstrap Diode
Semiconductor Device Having a Non-Voltaile Memory with High Speed-Read Operation
Nonvolatile Memory Device
Semiconductor Device with Controllable Channel Length and Manufacturing Method of Semiconductor Device with Controllable Channel Length
Semiconductor Device Having Deep Trench Structure and Method of Manufacturing Thereof
Non-Volatile Memory Device Including Sense Amplifier and Method for Operating the Same
Semiconductor Device Including Single Poly Non-Volatile Memory Device and Method of Manufacturing Same
Manufacturing Method of Semiconductor Device Using Gate-Through Implantation
Semiconductor Device with Increased Isolation Breakdown Voltage
Patent:
11,756,992 →
Application:
17/897,528 →
Bipolar-Cmos-Dmos Semiconductor Device Having a Deep Trench Isolation Structure for High Isolation Breakdown Voltage
eFUSE OTP MEMORY DEVICE INCLUDING SERIAL INTERFACE LOGIC AND OPERATION METHOD THEREOF
High Voltage Semiconductor Device and Manufacturing Method of High Voltage Semiconductor Device
Non-Volatile Memory Device Having a Fuse Type Memory Cell Array
Semiconductor Device Having Deep Trench Structure and Method of Manufacturing Thereof
Semiconductor Device with Deep Trench Isolation
Analog to Digital Converter and Operation Method Thereof
Semiconductor Device and Method Having Deep Trench Isolation
Semiconductor Device and Semiconductor Device Manufacturing Method with High-Voltage Isolation Capacitor
Semiconductor Device Having High-Voltage Isolation Capacitor
Application:
18/188,856 →
Publication:
US US20240063112A1
Manufacturing Method of a Semiconductor Device Having High-Voltage Isolation Capacitor
Semiconductor Device Including Nonvolatile Memory Device and Logic Device and Manufacturing Method of Semiconductor Device Including Nonvolatile Memory Device and Logic Device
Semiconductor Device Having High Breakdown Voltage Capacitor
High Voltage Semiconductor Device Having Schottky Barrier Diode
Non-Volatile Semiconductor Memory Device and Method of Manufacturing the Same
Semiconductor Device with Increased Isolation Breakdown Voltage
Semiconductor Device with Non-Volatile Memory Cell and Manufacturing Method Thereof
Semiconductor Device with Controllable Channel Length and Manufacturing Method Thereof
Semiconductor Device with Field Plate Structures
Analog-To-Digital Converter and Operation Method Thereof
High Voltage Semiconductor Device and Manufacturing Method of High Voltage Semiconductor Device
Semiconductor Device Manufacturing Method
Application:
18/470,923 →
Publication:
US US20240381634A1
Method of Manufacturing a Semiconductor Device Having a Trench Capacitor and a Logic Device
Application:
18/476,888 →
Publication:
US US20240322001A1
Electrical Fuse One Time Programmable (Otp) Memory
Bidirectional I/O Circuit and Integrated Circuit Including Bidirectional I/O Circuit
Non-Volatile Semiconductor Memory Device and Manufacturing Method Thereof
Application:
18/483,720 →
Publication:
US US20240282832A1
Single Poly Non-Volatile Memory Device and Manufacturing Method Thereof
Application:
18/487,546 →
Publication:
US US20240049463A1
Non-Volatile Memory Device Including Sense Amplifier and Method for Operating the Same
Split Gate Power Mosfet and Split Gate Power Mosfet Manufacturing Method
Semiconductor Device Having a Low Resistivity Trench Capacitor
Application:
18/522,740 →
Publication:
US US20240429271A1
Method for Manufacturing Semiconductor Die
Application:
18/524,809 →
Publication:
US US20240355631A1
Method of Manufacturing a Semiconductor Device with Junction Fet Transistors Having Multi Pinch-Off Voltages
Related Assignments
(4)
Other recorded transfers of the patents in this record — the chain of ownership.
Release of Security Interest
Aug 12, 2013
From: U.S. BANK NATIONAL ASSOCIATION
To: MAGNACHIP SEMICONDUCTOR LTD.
Reel/Frame 030988/0419 →
Corrective Assignment to Correct the Receiving Party Address Previously Recorded at Reel: 024563 Frame: 0807. Assignor(S) Hereby Confirms the Release by Secured Party.
Nov 25, 2014
From: US BANK NATIONAL ASSOCIATION
To: MAGNACHIP SEMICONDUCTOR LTD.
Reel/Frame 034469/0001 →
Assignment of Assignor's Interest
Sep 3, 2020
From: MAGNACHIP SEMICONDUCTOR, LTD.
To: KEY FOUNDRY CO., LTD.
Reel/Frame 053703/0227 →
Release of Security Interest
Mar 13, 2025
From: BANK OF MONTREAL
To: WORKFUSION, INC.
Reel/Frame 070501/0409 →