Test pattern for reliability measurement of copper interconnection line having moisture window and method for manufacturing the same
View Patent ↗Disclosed is a test pattern for a reliability measurement of a copper interconnection line having a moisture window and a method for manufacturing the same. The method includes the steps of: a first inter-layer insulation layer formed on the substrate; a plurality of bottom copper interconnection lines buried in the first inter-layer insulation layer; a second inter-layer insulation layer on the plurality of bottom copper interconnection lines and the first inter-layer insulation layer; a plurality of top copper interconnection lines filled in the second inter-layer insulation layer and connected to the plurality of bottom copper interconnection lines through the plurality of via contacts; and a passivation layer covering the plurality of top copper interconnection lines and having a plurality of moisture windows in which moistures are flown during an electro migration (EM) test.
1. A method for fabricating a test pattern for reliability measurement of a copper interconnection line with a moisture window, comprising the steps of:
forming a trench inside a first inter-layer insulation layer on the substrate;
forming a second inter-layer insulation layer on a plurality of bottom copper interconnection lines and the first inter-layer insulation layer;
forming a plurality of top copper interconnection lines buried in the second inter-layer insulation layer through a dual damascene process and connected to the plurality of bottom copper interconnection lines through a plurality of via contacts; and
forming a plurality of passivation layers above the second inter-layer insulation layer and the plurality of top copper interconnection lines, each passivation layer having a width broader than a corresponding top copper interconnection line to cover the corresponding top copper interconnection line; and
forming a plurality of moisture windows between the plurality of passivation layers to open a top portion of the second inter-layer insulation layer allowing moisture to flow in through the second inter-layer insulation layer to flow into the top copper interconnection lines during an electro migration (EM) test,
wherein each of the plurality of moisture windows is a line shaped window opening a top portion of the second inter-layer insulation layer,
wherein the step of forming the passivation layer comprises the steps of:
forming the passivation layer covering the second inter-layer insulation layer and the plurality of top copper interconnection lines;
opening one side of the plurality of top copper interconnection lines by applying a pad etching process to the passivation layer;
forming a plurality of aluminum pads connected to the each corresponding top copper interconnection lines; and
forming a moisture window mask on the passivation layer and the plurality of aluminum pads.
2. The method of claim 1 , wherein the moisture window is a line shaped window opening a top portion of the second inter-layer insulation layer in order to make the moisture flown in through the second inter-layer insulation layer to flow into the top copper interconnection line.
3. The method of claim 1 , wherein the plurality of bottom copper interconnection lines and the plurality of top copper interconnection lines are surrounded by a diffusion barrier layer for preventing a diffusion of the copper atoms.