IP Library Granted Patent US 7,030,507
Granted Patent B2
US 7,030,507 · App. 10/874,491 · Granted Apr 18, 2006

Test pattern of semiconductor device

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Quick Facts
Patent No.
US 7,030,507
App. No.
10/874,491
Granted
Apr 18, 2006
Kind
B2
Abstract

Disclosed is a test pattern comprising: lower metal patterns for test formed in such a manner that crank-type patterns are arranged in sequence overlapping on each other in a view along a vertical line; hole patterns formed in such a manner that each of the hole patterns exposes either a front end and a rear end of each crank-type lower metal pattern; and upper metal patterns formed in such a manner that each upper metal pattern interconnects a front end of each lower metal pattern and a rear end of an adjacent lower metal pattern overlapping on each other in a view along a vertical line.

Claims (8)

1. A test pattern formed in order to understand alignment state and cause of alignment failure between lower metal wiring and via contacts when multi-layer metal wiring is formed in a cell area, the test pattern comprising:

a plurality of lower metal patterns for test, each of said lower metal patterns being in the shape of a crank, each crank-shaped pattern having a first and second end, the first end of a first crank-shaped pattern being parallel and adjacent to, but displaced from the second end of a second crank-shaped pattern;

hole patterns formed in such a manner that, in relation to the crank-shaped lower metal patterns having the first end of the first lower metal pattern overlapping the second end of the second lower metal pattern such that a first hole pattern disposed at an upper side is shifted leftward and downward by a predetermined angle so as to expose the first end of the first lower metal pattern, and a second hole pattern disposed at a lower side is shifted rightward and upward by a predetermined angle so as to expose the second end of the second lower metal pattern; and

upper metal patterns formed in such a manner that each upper metal pattern interconnects a front end of each lower metal pattern and a rear end of an adjacent lower metal pattern overlapping on each other in a view along a vertical line.

2. An SRAM comprising:

a plurality of lower metal patterns for test, each of said lower metal patterns being in the shape of a crank, each crank-shaped pattern having a first and second end, a first end of a first crank-shaped pattern being parallel and adjacent to, but displaced from the second end of a second crank-shaped pattern;

hole patterns formed in such a manner that, in relation to the crank-shaped lower metal patterns having the first end of the first lower metal pattern overlapping the second end of the second lower metal pattern such that a first hole pattern disposed at an upper side is shifted leftward and downward by a predetermined angle so as to expose the first end of the first lower metal pattern, and second hole pattern disposed at a lower side is shifted rightward and upward by a predetermined angle so as to expose the second end of the second lower metal pattern; and

upper metal patterns formed in such a manner that each upper metal pattern interconnects a front end of each lower metal pattern and a rear end of an adjacent lower metal pattern overlapping on each other in a view along a vertical line.

Assignments (3)
CHANGE OF NAME Recorded Mar 12, 2024
From: KEY FOUNDRY CO., LTD.
To: SK KEYFOUNDRY INC.
Reel/Frame 066794/0290 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 3, 2020
From: MAGNACHIP SEMICONDUCTOR, LTD.
To: KEY FOUNDRY CO., LTD.
Reel/Frame 053703/0227 →
CORRECTIVE ASSIGNMENT TO CORRECT THE RECEIVING PARTY ADDRESS PREVIOUSLY RECORDED AT REEL: 024563 FRAME: 0807. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE BY SECURED PARTY. Recorded Nov 25, 2014
From: US BANK NATIONAL ASSOCIATION
To: MAGNACHIP SEMICONDUCTOR LTD.
Reel/Frame 034469/0001 →