Capacitor type humidity sensor

1. A capacitor type humidity sensor comprising:

a semiconductor substrate comprising a humidity sensing region;

a sensing capacitor, disposed in the humidity sensing region, comprising:

a humidity sensitive layer;

upper electrodes comprising a first electrode and a second electrode; and

a bottom electrode disposed under, and connected to, the second electrode; and

a reference capacitor comprising a first reference electrode and a second reference electrode,

wherein a plurality of sections of the first reference electrode corresponds to a single section of the second reference electrode,

the sensing capacitor and the reference capacitor are disposed on different planes from each other, and

the humidity sensitive layer is disposed on and between the first electrode and the second electrode.

2. The sensor of claim 1 , wherein the reference capacitor is aligned under the sensing capacitor.

3. The sensor of claim 1 , wherein the reference capacitor comprises an MIM (metal insulator metal) capacitor in the form of an array.

4. The sensor of a claim 1 , wherein the reference capacitor comprises a PIP (polysilicon insulator polysilicon) capacitor in the form of an array.

5. The sensor of claim 1 , further comprising a feedback capacitor configured to provide a feedback capacitance value (C f ), wherein a dielectric layer of the feedback capacitor is made of a different material from the humidity sensitive layer.

6. The sensor of claim 5 , wherein the feedback capacitor is configured to accumulate a charge that corresponds to capacitance differences (C s −C r ) generated in the sensing capacitor (C s ) and the reference capacitor (C r ).

7. The sensor of claim 1 , wherein the humidity sensitive layer extends to an upper portion of a passivation layer disposed on the substrate.

8. The sensor of claim 1 , wherein the humidity sensitive layer is exposed to the atmosphere.

9. The sensor of claim 1 , wherein the first reference electrode comprises a first material and the second reference electrode comprises a second material, and wherein the first material is different than the second material.

10. The sensor of claim 1 , wherein the first electrode has a stripe shape and the second electrode has a square shape.

11. The sensor of claim 1 , wherein the humidity sensitive layer comprises a region disposed below a bottom surface of the first electrode.

12. A humidity sensor comprising two capacitor type humidity sensors of claim 1 .

13. A capacitor type humidity sensor comprising:

a humidity sensing region comprising a humidity sensitive layer;

a sensing capacitor, disposed in the humidity sensing region, comprising a first electrode and a second electrode disposed on a first plane; and

a reference capacitor, disposed on a different plane than the sensing capacitor, comprising a top electrode, a bottom electrode, and a dielectric layer disposed between the top electrode and the bottom electrode,

wherein a plurality of sections of the top electrode corresponds to a single section of the bottom electrode.

14. The sensor of claim 13 , wherein the capacitor type humidity sensor further comprises a peripheral circuit region, and wherein the peripheral circuit region is configured to process a signal detected by the humidity sensing region to output a detected humidity.

15. The sensor of claim 14 , wherein the peripheral circuit region comprises a reference voltage block, a temperature sensing block, a Vdd power supply block, a gain control amp (GCA) block, and at least one signal control block.

16. The sensor of claim 13 , wherein the sensing capacitor further comprises:

a Via connecting to the second electrode; and

a lower metal wire disposed on a second plane below the first plane, wherein the lower metal wire connects to the Via, and

wherein the humidity sensitive layer is disposed adjacent to the Via.

17. The sensor of claim 13 , wherein the humidity sensitive layer extends over a passivation layer disposed on the reference capacitors.

18. The sensor of claim 13 , wherein the dielectric layer is made of a material different from the humidity sensitive layer.

19. The sensor of claim 13 , wherein the top electrode is disposed on a third plane and the bottom electrode is disposed on a fourth plane below the third plane.

20. The sensor of claim 13 , wherein a direction of separation of opposing electrodes of the sensing capacitor is transverse to a direction of separation of opposing electrodes of the reference capacitor.

21. A capacitor type humidity sensor, comprising:

a humidity sensing region comprising a humidity sensitive layer;

a sensing capacitor disposed in the humidity sensing region; and

a reference capacitor, comprising:

plural upper electrodes;

a bottom electrode disposed below the plural upper electrodes; and

a dielectric layer disposed between lower surfaces of the plural upper electrodes and an upper surface of the bottom electrode.

22. The capacitor type humidity sensor of claim 21 , wherein the reference capacitor further comprises vias connecting respective ones of the plural upper electrodes to a metal interconnection.

23. The capacitor type humidity sensor of claim 21 , wherein the sensing capacitor comprises:

a first electrode; and

a second electrode,

wherein the humidity sensitive layer comprises a region disposed below a bottom surface of the first electrode.

24. The capacitor type humidity sensor of claim 21 , wherein the reference capacitor includes a plurality of reference capacitors.

25. The capacitor type humidity sensor of claim 24 , wherein each of the reference capacitors is square-shaped.