Semiconductor device with junction FET transistors having multi pinch-off voltages
A semiconductor device includes a first junction-gate field-effect transistor (JFET) having a first pinch-off voltage, and a second JFET having a second pinch-off voltage higher than the first pinch-off voltage. The first JFET includes a first top gate region disposed on a surface of a substrate, a first channel region surrounding the first top gate region, and a first bottom gate region disposed under the first channel region. The second JFET includes a second top gate region disposed on the surface and having a same depth with the first top gate region relative to the surface, a second channel region surrounding the second top gate region and disposed deeper than the first channel region relative to the surface, and a second bottom gate region disposed under the second channel region and being deeper than the first bottom gate region relative to the surface.
1. A semiconductor device, comprising:
a first junction-gate field-effect transistor (JFET) having a first pinch-off voltage, the first JFET comprising:
a first top gate region disposed on a surface of a substrate;
a first channel region surrounding the first top gate region; and
a first bottom gate region disposed under the first channel region, wherein the first channel region and the first bottom gate region have different conductivity types from each other; and
a second JFET having a second pinch-off voltage higher than the first pinch-off voltage, comprising:
a second top gate region disposed on the surface and having a depth that is the same as a depth of the first top gate region relative to the surface;
a second channel region surrounding the second top gate region and having a depth that is greater than a depth of the first channel region relative to the surface; and
a second bottom gate region disposed under the second channel region and having a depth which is greater than a depth of the first bottom gate region relative to the surface,
wherein the second channel region and the second bottom gate region have different conductivity types from each other
wherein the first JFET further comprises a first device isolation film disposed in contact with the first channel region, and the first bottom gate region and the first device isolation film are disposed in contact with each other, and
wherein the second JFET further comprises a second device isolation film disposed in contact with the second channel region, and the second bottom gate region and the second device isolation film are disposed spaced apart from each other.
2. The semiconductor device of claim 1 ,
wherein the first JFET further comprises a first high concentration source region and a first high concentration drain region disposed in the first channel region and spaced apart from the first top gate region, and
wherein the second JFET further comprises a second high concentration source region and a second high concentration drain region disposed in the second channel region and spaced apart from the second top gate region.
3. The semiconductor device of claim 1 ,
wherein the first JFET further comprises a first well region having a same conductivity type as the first bottom gate region and disposed to surround the first bottom gate region, and
wherein the second JFET further comprises a second well region having a same conductivity type as the second bottom gate region and disposed to surround the second bottom gate region.
4. The semiconductor device of claim 1 ,
wherein the first JFET further comprises a silicide blocking film disposed around the first top gate region.
5. The semiconductor device of claim 1 ,
wherein, relative to the surface, a depth of a bottom surface of the first bottom gate region is shallower than a depth of a bottom surface of the second bottom gate region.
6. A semiconductor device, comprising:
junction-gate field-effect transistors (JFETs) each having a pinch-off voltage, each of the JFETs comprising:
a top gate region disposed on a surface of a substrate;
a channel region surrounding the first top gate region; and
a bottom gate region disposed under the channel region,
wherein the channel region and the bottom gate region have different conductivity types from each other,
the bottom gate region of one of the JFETs has depth which is greater than a depth of the bottom gate region of another of the JFETs, and
the first pinch-off voltage of the one of the JFETs is higher than the pinch-off voltage of the other of the JFETs
wherein each of the JFETs further comprise a device isolation film disposed in contact with the channel region,
the bottom gate region and first device isolation film of the other of the JFETs are disposed in contact with each other, and
the bottom gate region and the device isolation film of the one of the JFETs are disposed spaced apart from each other.
7. The semiconductor device of claim 6 ,
wherein each of the JFETs further comprises a high concentration source region and a high concentration drain region disposed in the channel region and spaced apart from the top gate region.
8. The semiconductor device of claim 6 ,
wherein each of the JFETs further comprises a well region having a same conductivity type as the bottom gate region and disposed to surround the bottom gate region.
9. The semiconductor device of claim 6 ,
wherein the other of the JFETs further comprises a silicide blocking film disposed around a corresponding top gate region.
10. The semiconductor device of claim 6 ,
wherein, relative to the surface, a depth of a bottom surface of the bottom gate region of the other of the JFETs is shallower than a depth of a bottom surface of the bottom gate region of the one of the JFETs.