Semiconductor device having a diode type electrical fuse (e-fuse) cell array
A semiconductor device includes a first word line configured to perform a writing operation or a programing operation, a second word line configured to perform a read operation, a first switching device including a first gate electrode and a first node, a second switching device comprising a second gate electrode and a second node, an electrical fuse (e-fuse) disposed between the first node and the second node, and a diode coupled to the first node and the first word line, wherein the first gate electrode and the second gate electrode are coupled to the second word line.
1. A semiconductor device comprising:
an e-fuse formed on an insulation layer;
a first switching device formed on a first well region;
a diode formed on a second well region having a opposite conductivity type to a conductivity type of the first well region; and
a second switching device formed on a third well region having a same conductivity type as the conductivity type of the first well region.
2. The semiconductor device of claim 1 , further comprising:
a guard ring that encloses the first switching device, the diode, the e-fuse and the second switching device.
3. The semiconductor device of claim 1 , wherein the first switching device and the second switching device comprise n-type metal-oxide-semiconductor (NMOS) transistors.
4. The semiconductor device of claim 1 , further comprising:
a first contact plug formed on the first switching device;
a second contact plug formed on the diode;
a third contact plug and a fourth contact plug formed on the e-fuse; and
a fifth contact plug formed on the second switching device.
5. The semiconductor device of claim 1 , further comprising:
a first metal interconnection connecting the first contact plug, the second contact plug and the third contact plug; and
a second metal interconnection connecting the fourth contact plug and the fifth contact plug.
6. A semiconductor device comprising:
an e-fuse formed on an insulation layer;
a first switching device formed on a first well region;
a diode formed on a second well region; and
a second switching device formed on a third well region.
7. The semiconductor device of claim 6 , wherein the second well region has an opposite conductivity type to a conductivity type of the first well region.
8. The semiconductor device of claim 6 , wherein the third well region has a same conductivity type as a conductivity type of the first well region.
9. The semiconductor device of claim 6 , further comprising:
a guard ring that encloses the first switching device, the diode, the e-fuse and the second switching device.
10. The semiconductor device of claim 6 , wherein the first switching device and the second switching device comprise n-type metal-oxide-semiconductor (NMOS) transistors.