Method for forming low-k dielectric layer of semiconductor device
Disclosed is a method for forming a low-k dielectric layer of a semiconductor device. The method includes a step providing a semiconductor substrate having a predetermined pattern, a step coating porous powders having a micro size on the semiconductor by spraying the porous powders, and a step performing a heat treatment process with respect to a resultant structure, thereby forming the low-k dielectric layer. After micro-sized porous powders are coated on a semiconductor substrate, a heat treatment process is performed, so that powders are bonded to each other, thereby forming a low-k dielectric layer even if the dielectric layer has a dielectric constant equal to or less than 2.8. A signal delay time is reduced by depositing the low-k dielectric layer on the semiconductor substrate.
1. A method for forming a low-k dielectric layer of a semiconductor device, the method comprising the steps of:
i) providing a semiconductor substrate having a predetermined pattern;
ii) coating micro-sized particles of porous powder on the semiconductor; and
iii) performing a heat treatment process with respect to a resultant structure, wherein the micro-sized particles bond with each other to form the low-k dielectric layer of equal to or less than 2.8 dielectric constant and having a plurality of pores formed therein.
2. The method as claimed in claim 1 , wherein step ii) is performed under an inert gas atmosphere.
3. The method as claimed in claim 1 , wherein the dry porous powder is sprayed onto the while semiconductor substrate is rotating about a non-stationary rotating center when step ii) is performed.
4. The method as claimed in claim 1 , wherein impurities are doped into porous powders having the micro size.
5. The method as claimed in claim 1 , wherein steps ii) and iii) are performed in a same chamber.
6. The method as claimed in claim 1 , further comprising a step of performing a chemical mechanical polishing process with respect to the low-k dielectric layer in order to adjust a thickness of the low-k dielectric layer, after the heat treatment step is performed.
7. The method as claimed in claim 1 , wherein the heat treatment step is carried out by using one of an RTP (rapid thermal process), a high-density plasma process, and a laser heat treatment process.