Semiconductor device comprising Schottky barrier diodes
A semiconductor device includes a first N-type deep well region and a second N-type deep well region formed in a substrate, an N-type diffused well region formed between the first N-type deep well region and the second N-type deep well region, wherein a concentration of the N-type diffused well region is less than a concentration of the first N-type deep well region or the second N-type deep well region, a first P-type well region formed in the first N-type deep well region, a second P-type well region formed in the N-type diffused well region, an insulating film formed to be in contact with the first P-type well region, and a silicide formed on the N-type diffused well region, such that a Schottky barrier diode is formed between the silicide and the N-type diffused well.
1. A semiconductor device comprising:
a first N-type deep well region and a second N-type deep well region formed in a substrate;
an N-type diffused well region formed between the first N-type deep well region and the second N-type deep well region, wherein a dopant concentration of the N-type diffused well region is lower than a dopant concentration of the first N-type deep well region or the second N-type deep well region;
a first P-type well region formed in the first N-type deep well region;
a second P-type well region formed in the N-type diffused well region and having a depth equal to a depth of the first P-type well region;
an insulating film formed to be in contact with the first P-type well region; and
a silicide formed on the N-type diffused well region, such that a Schottky barrier diode is formed between the silicide and the N-type diffused well region.
2. The semiconductor device of claim 1 , further comprising:
a P+ doped first region formed in the first P-type well region; and
a P+ doped second region formed in the second P-type well region.
3. The semiconductor device of claim 1 , further comprising:
a third P-type well region formed in the second N-type deep well region and having a depth equal to the respective depth of the first P-type well region and the second P-type well region; and
an N-type buried layer formed below the N-type diffused well region, and wherein a dopant concentration of the N-type buried layer is greater than the dopant concentration of the N-type diffused well region,
wherein the second P-type well region is formed between the first P-type well region and the third P-type well region.
4. The semiconductor device of claim 3 , wherein the silicide is further formed to be in contact with the first P-type well region, the second P-type well region and the third P-type well region.
5. The semiconductor device of claim 1 , further comprising:
an N-type well region formed in the first N-type deep well region;
a cathode connected to the N-type well region;
a poly field plate formed on the insulating film; and
an anode connected to the poly field plate and the silicide.
6. A semiconductor device comprising:
an N-type deep well region and an N-type diffused well region contacting the N-type deep well region formed in a substrate, wherein a dopant concentration of the N-type diffused well region is lower than a dopant concentration of the N-type deep well region;
a first P-type well region formed in the N-type deep well region;
a second P-type well region formed in the N-type diffused well region and having a depth equal to a depth of the first P-type well region;
an insulating film formed to be in contact with the first P-type well region; and
a silicide formed to be in contact with the N-type diffused well region, such that a Schottky barrier diode is formed between the silicide and the N-type diffused well region.
7. The semiconductor device of claim 6 , further comprising:
a third P-type well region formed in another N-type deep well region and having a depth equal to the respective depth of the first P-type well region and the second P-type well region; and
an N-type buried layer formed below the N-type deep well region,
wherein the second P-type well region is formed between the first P-type well region and the third P-type well region.
8. The semiconductor device of claim 7 ,
wherein a dopant concentration of the N-type buried layer is greater than the dopant concentration of the N-type diffused well region.
9. The semiconductor device of claim 6 , further comprising:
an N-type well region formed in the N-type deep well region and separated from the first P-type well region by the insulating film;
a poly field plate formed on the insulating film;
a cathode connected to the N-type well region; and
an anode connected to the poly field plate and the silicide.
10. The semiconductor device of claim 7 , wherein the silicide is further formed to be in contact with the first P-type well region, the second P-type well region, and the third P-type well region.
11. A semiconductor device comprising:
a first N-type deep well region and a second N-type deep well region formed in a substrate;
an N-type diffused well region formed between the first N-type deep well region and the second N-type deep well region;
a first P-type well region formed in the first N-type deep well region;
a second P-type well region formed in the N-type diffused well region and having a depth equal to a depth of the first P-type well region;
a third P-type well region formed in the second N-type deep well region and having a depth equal to the respective depth of the first P-type well region and the second P-type well region;
a first insulating film formed to be in contact with the first P-type well region; and
a silicide formed on the N-type diffused well region, such that a Schottky barrier diode is formed between the silicide and the N-type diffused well region,
wherein the second P-type well region is formed between the first P-type well region and the third P-type well region, and
wherein the silicide is further formed to be in contact with the first, second and third P-type well regions.
12. The semiconductor device of claim 11 , further comprising an N-type buried layer formed below the N-type diffused well region.
13. The semiconductor device of claim 12 , wherein a dopant concentration of the N-type buried layer is greater than a dopant concentration of the N-type diffused well region.
14. The semiconductor device of claim 11 , wherein the silicide is further formed to be in contact with the first and second N-type deep well regions.
15. The semiconductor device of claim 11 , further comprising a second insulating film formed to be in contact with the third P-type well region.
16. The semiconductor device of claim 15 , further comprising a first poly field plate and a second poly field plate respectively formed on the first insulating film and the second insulating film.
17. The semiconductor device of claim 12 , wherein the N-type buried layer is overlapped with the first P-type well region, the second P-type well region and the third P-type well region.
18. The semiconductor device of claim 11 , wherein the second P-type well region is spaced apart from the first P-type well region and the third P-type well region.
19. The semiconductor device of claim 11 , further comprising a first N-type well region and a second N-type well region respectively formed in the first N-type deep well region and the second N-type deep well region.