Semiconductor device having circuitry positioned above a buried magnetic sensor

1. A semiconductor device comprising:

a circuitry disposed on a silicon on insulator (SOI) substrate comprising a semiconductor substrate, a buried oxide, and an SOI layer; and

a magnetic sensor, disposed under the circuitry, comprising:

a sensing area formed in the semiconductor substrate; and

a sensor contact passing through the buried oxide to connect with the sensing area, wherein the circuitry is formed on the SOI layer.

2. The semiconductor device of claim 1 , wherein the sensing area comprises:

a N-doped area; and

a P-doped area doped deeper than the N-doped area.

3. The semiconductor device of claim 1 ,

wherein the sensor contact passes through the SOI layer.

4. The semiconductor device of claim 1 ,

wherein the sensor contact is connected by a wire with the circuitry.

5. The semiconductor device of claim 1 ,

wherein the magnetic sensor is formed under the buried oxide.

6. The semiconductor device of claim 1 , further comprising:

an isolation area formed around the sensor contact.

7. The semiconductor device of claim 1 , further comprising:

an intermetal dielectric formed on the SOI layer; and

an integrated magnetic concentrator (IMC) formed on the intermetal dielectric.

8. The semiconductor device of claim 7 ,

wherein the IMC comprises a non-planar surface.

9. The semiconductor device of claim 7 ,

wherein the IMC is in contact with the intermetal dielectric and is in contact with the buried oxide.

10. The semiconductor device of claim 1 , wherein an epitaxial layer is formed on a top surface of the SOI layer.

11. The semiconductor device of claim 10 , wherein the sensor contact connected to the sensing area is formed through the epitaxial layer.