Semiconductor device having circuitry positioned above a buried magnetic sensor
View Patent ↗A semiconductor device including a circuitry, a magnetic sensor, and a buried oxide. The circuitry is formed on a substrate. The magnetic sensor has a sensing area formed under the circuitry. The buried oxide is disposed between the circuitry and the magnetic sensor. The sensing are comprises an N-doped area and a P-doped area doped deeper than the N-doped area, and sensor contacts connect the sensing area with the circuitry through the buried oxide.
1. A semiconductor device comprising:
a circuitry formed on a silicon substrate; and
a magnetic sensor having a sensing area formed under the circuitry,
wherein the sensing area comprises an N-doped area and a P-doped area doped deeper than the N-doped area, and sensor contacts connect the sensing area to the circuitry, and
wherein the P-doped area is discretely formed in the silicon substrate and has a higher doping concentration than that of the silicon substrate, and the P-doped area is different from the silicon substrate.
2. The semiconductor device of claim 1 , wherein two or more of the sensor contacts receive a voltage change due to a Hall effect and the other sensor contacts receive a corresponding amount of current.
3. The semiconductor device of claim 1 , wherein one of the sensor contacts acts as a ground.
4. The semiconductor device of claim 1 , wherein the N-doped area comprises an area of a high concentration of dopant and the N-doped area is connected to the circuitry at the area of the high concentration of dopant.
5. The semiconductor device of claim 1 , wherein current flows through the N-doped area and the P-doped area acts as a barrier that guides how current flows through the N-doped area.
6. The semiconductor device of claim 1 , wherein the P-doped area is disposed outside of the N-doped area.
7. The semiconductor device of claim 1 , wherein an upper-most surface of the P-doped area is disposed under an upper-most surface of the N-doped area.
8. The semiconductor device of claim 1 , further comprising a highly P-doped area disposed in the N-doped area, wherein the highly P-doped area has a greater ion concentration than the P-doped area.
9. The semiconductor device of claim 8 , wherein the highly P-doped area is disposed between at least one of the sensor contacts and the P-doped area.
10. The semiconductor device of claim 1 , wherein the N-doped area and the P-doped area of the sensing area are entirely contained within the substrate.
11. A semiconductor device, comprising:
a silicon on insulator (SOI) substrate comprising a silicon substrate, a buried oxide, and an SOI layer;
a circuitry formed on the buried oxide; and
a magnetic sensor having a sensing area formed under the buried oxide,
wherein the sensing area comprises an N-doped area and a P-doped area doped deeper than the N-doped area, and sensor contacts connect the sensing area with the circuitry through the buried oxide.
12. The semiconductor device of claim 11 , wherein the P-doped area has a higher doping concentration than that of the silicon substrate.
13. A semiconductor device comprising:
a circuitry formed on a silicon substrate;
a magnetic sensor having a sensing area formed under the circuitry, wherein the sensing area comprises an N-doped area and a P-doped area doped deeper than the N-doped area, and sensor contacts connect the sensing area to the circuitry;
an intermetal dielectric formed on the sensor contacts; and
an integrated magnetic concentrator (IMC) formed on the intermetal dielectric,
wherein the P-doped area is formed in the silicon substrate and has a higher doping concentration than that of the silicon substrate.