Method for forming inductor in semiconductor device

1. A method for forming an inductor in a semiconductor device, comprising the steps of:

forming a first metal layer on a semiconductor substrate in which a predetermined structure is formed, and then patterning the first metal layer so that a predetermined region of the semiconductor substrate is exposed;

forming a first copper layer on the entire resulting surface and then polishing the first copper layer;

forming a second metal layer on the resulting surface including the polished first copper layer and then patterning the second metal layer so that predetermined regions of the first metal layer and the first copper layer are exposed;

forming a second copper layer on the formed resulting surface; and

polishing the resulting surface and stripping the first and second metal layers.

2. The method as claimed in claim 1 , wherein the first metal layer or the second metal layer is formed using one of nickel (Ni), cobalt (Co), titanium (Ti), aluminum (Al), tungsten (W), tin (Sn) and tantalum (Ta).

3. The method as claimed in claim 1 , wherein the first copper layer or the second copper layer is formed by means of an electroplating method or an electroless plating method using an additive-free plating solution.

4. The method as claimed in claim 3 , wherein the electroplating method using the additive-free plating solution is performed using a solution in which H 2 SO 4 and CuSO 4 are mixed in the ratio of 1˜99:1˜99.

5. The method as claimed in claim 3 , wherein the electroplating method using the additive-free plating solution is performed with the concentration of HCl kept 1 to 1000 ppm.

6. The method as claimed in claim 3 , wherein the electroplating method using the additive-free plating solution is performed using one of a forward DC plating method, a pulse-reverse plating method and a pulse plating method, or a multi-step plating method in which those methods are mixed.

7. The method as claimed in claim 3 , wherein the electroless plating method includes performing a process of adding a surface cleaning and activation agent.

8. The method as claimed in claim 1 , further comprising the step of implementing an annealing process after the step of forming the second copper layer is performed.

9. The method as claimed in claim 8 , wherein the annealing process is performed at a temperature of 50 to 500° C. for 1 minute to 5 hours, and is performed in a hydrogen, argon, nitrogen or forming gas atmosphere.

10. The method as claimed in claim 1 , wherein the stripping of the first metal layer or the second metal layer is performed through a wet etch process.