Method for fabricating semiconductor device
View Patent ↗Disclosed is a method for fabricating a semiconductor device. The method comprises the steps of: sequentially forming a first anti-reflection layer and a first photoresist film on a substrate; forming a first image layer; forming a second anti-reflection layer and a second photoresist film; forming a second image layer which opens wider than the first image layer; supplying oxygen plasma to a resultant in order to transfer a pattern of the second image layer on the second anti-reflection layer and to transfer a pattern of the first image layer on the first anti-reflection layer, thereby forming an opening; forming a metal layer; forming a metal pattern to fill the opening; and removing the second image layer, the second anti-reflection layer, the first image layer, and the first anti-reflection layer.
1. A method for fabricating a semiconductor device, the method comprising the steps of:
sequentially forming a first anti-reflection layer including no photoactive material and a first photoresist film including silicon/photoactive material on a silicon substrate;
exposing and wet-developing the first photoresist film, thereby forming a first image layer having a predetermined shape;
sequentially forming a second anti-reflection layer including no photoactive material and a second photoresist film including silicon/photoactive material on an entire surface of the substrate including the first image layer;
exposing and wet-developing the second photoresist film, thereby forming a second image layer which opens wider than the first image layer;
supplying oxygen plasma to a resultant structure in order to transfer a pattern of the second image layer on the second anti-reflection layer and to transfer a pattern of the first image layer exposed through the second anti-reflection layer on the first anti-reflection layer, thereby forming an opening;
forming a metal layer on an entire surface of the substrate including the opening;
performing a chemical-mechanical polishing process with respect to the metal layer, thereby forming a metal pattern to fill the opening; and
removing the second image layer, the second anti-reflection layer, the first image layer, and the first anti-reflection layer.
2. The method as claimed in claim 1 , wherein, the first photoresist film is formed at a thickness of about 2000 Å, and the second photoresist film is formed at a thickness of about 3000 Å.
3. The method as claimed in claim 1 , wherein, the first anti-reflection layer is formed at a thickness of about 1 to 100 μm.
4. The method as claimed in claim 1 , wherein a step of removing the second image layer, the second anti-reflection layer, the first image layer, and the first anti-reflection layer is performed using a polar organic solvent.
5. The method as claimed in claim 1 , further comprising steps of performing a baking process after each of the first and the second anti-reflection layer is formed.