Semiconductor device having a diode type electrical fuse (e-fuse) cell array
A semiconductor device includes a first word line configured to perform a writing operation or a programing operation, a second word line configured to perform a read operation, a first switching device including a first gate electrode and a first node, a second switching device comprising a second gate electrode and a second node, an electrical fuse (e-fuse) disposed between the first node and the second node, and a diode coupled to the first node and the first word line, wherein the first gate electrode and the second gate electrode are coupled to the second word line.
1. A semiconductor device, comprising:
a first word line configured to perform a writing operation or a programing operation;
a second word line configured to perform a read operation;
a first switching device comprising a first gate electrode and a first node;
a second switching device comprising a second gate electrode and a second node;
an electrical fuse (e-fuse) disposed between the first node and the second node; and
a diode coupled to the first node and the first word line,
wherein the first gate electrode and the second gate electrode are coupled to the second word line.
2. The semiconductor device of claim 1 , further comprising:
a first bit line coupled to the second node and a third switching device, wherein the first switching device and the second switching device each comprise an N-type metal-oxide-semiconductor (NMOS) transistor, and the third switching device comprises a P-type metal-oxide-semiconductor (PMOS) transistor.
3. The semiconductor device of claim 1 , wherein a program current passes through the first bit line, the second node, the e-fuse, the first node, the diode and the first word line, in that order.
4. The semiconductor device of claim 1 , wherein a read current passes through the first switching device, the first node, the e-fuse, the second node and the second switching device, in that order.
5. The semiconductor device of claim 1 , wherein a current path for the programing operation in the e-fuse has a direction opposite to a direction for a current path for the read operation in the e-fuse.
6. The semiconductor device of claim 1 , further comprising:
a program current controller configured to provide a program voltage to a selected e-fuse cell for the program operation;
a read current control controller configured to provide a read voltage to the selected e-fuse cell for the read operation;
a reference voltage generator configured to generate a reference voltage; and
a sensor, comprising a sense amplifier, configured to sense whether the selected e-fuse cell is programmed or not.
7. The semiconductor device of claim 6 , wherein the read current controller comprises a read current switching device and a read current resistor connected in series.
8. The semiconductor device of claim 6 , wherein the reference voltage generator comprises:
first, second and third reference switching devices; and
first and second reference resistors,
wherein each of the read current switching device and the first reference switching device comprises a P-type metal-oxide-semiconductor (PMOS) transistor.