Semiconductor device including single poly non-volatile memory device and method of manufacturing same
A semiconductor device includes: a logic region and a non-volatile memory (NVM) region; a logic gate insulating film disposed on a substrate in the logic region; at least one gate oxidation acceleration ion implantation layer disposed in the NVM region; at least one NVM gate insulating film disposed on the at least one gate oxidation acceleration ion implantation layer; a logic gate electrode disposed on the logic gate insulating film; and at least one NVM gate electrode disposed on the at least one NVM gate insulating film, wherein a thickness of the at least one NVM gate insulating film is equal or greater than a thickness of the logic gate insulating film.
1 . A semiconductor device, comprising:
a first trench isolation, a second trench isolation, and a third trench isolation disposed in a semiconductor substrate;
a first P-type well (PW) region disposed between the first trench isolation and the second trench isolation, the first PW region having a depth greater than each of the first trench isolation and the second trench isolation;
a second PW region disposed between the second trench isolation and the third trench isolation, the second PW region having a depth greater than each of the second trench isolation and the third trench isolation;
a sensing transistor comprising a sensing gate insulating layer and a sensing gate electrode disposed on the first PW region;
a selection transistor comprising a selection gate insulating layer and a selection gate electrode disposed on the first PW region;
a control gate structure comprising a control gate insulating layer and a control gate electrode disposed on the second PW region; and
a first gate-oxidation-accelerating ion implantation layer comprising dopant ions and disposed below the sensing gate insulating layer, such that the sensing gate insulating layer has a thickness greater than a thickness of the selection gate insulating layer.
2 . The semiconductor device of claim 1 , further comprising:
a second gate-oxidation-accelerating ion implantation layer comprising dopant ions and disposed below the control gate insulating layer, such that the control gate insulating layer has a thickness greater than the thickness of the selection gate insulating layer.
3 . The semiconductor device of claim 1 , further comprising:
a first isolation N-type well (NW) region disposed below the first trench isolation, the first isolation NW region being in contact with a bottom surface of the first trench isolation;
a second isolation NW region disposed below the second trench isolation, the second isolation NW region being in contact with a bottom surface of the second trench isolation; and
a third isolation NW region disposed below the third trench isolation, the third isolation NW region being in contact with a bottom surface of the third trench isolation.
4 . The semiconductor device of claim 3 , further comprising:
a deep NW region surrounding the first isolation NW region, the second isolation NW region, the third isolation NW region, the first PW region, and the second PW region.
5 . The semiconductor device of claim 1 , further comprising:
a logic region in the semiconductor substrate;
a first logic PW region and a first logic N-type well (NW) region disposed in the logic region;
a second logic PW region and a second logic NW region disposed in the logic region;
a first N-type MOS transistor comprising a first gate insulating layer and a first gate electrode disposed on the first logic PW region;
a first P-type MOS transistor comprising a second gate insulating layer and a second gate electrode disposed on the first logic NW region; and
a second N-type MOS transistor comprising a third gate insulating layer and a third gate electrode disposed on the second logic PW region;
a second P-type MOS transistor comprising a fourth gate insulating layer and a fourth gate electrode disposed on the second logic NW region.