Method of manufacturing semiconductor device
View Patent ↗Disclosed herein is a method of manufacturing a semiconductor device, and more specifically, to a method of manufacturing a semiconductor device having a capacitor and a resistor in which a thin film resistor and a capacitor are formed at the same time, a thin film resistor is formed on a metal wiring, and the two thin film resistors are then serially connected. Accordingly, resistance per unit area in substrate can be increased, a device characteristic can be improved and a process unit price can be lowered.
1. A method of manufacturing a semiconductor device, comprising:
(a) simultaneously forming a capacitor and a first resistor on a semiconductor substrate, by:
(a-1) sequentially depositing a metal film, a barrier film, a dielectric film, a conductive material film, and an etch-stop layer;
(a-2) selectively patterning the etch-stop layer, the conductive material film and the dielectric film to form a capacitor pattern and a first resistor pattern; and
(a-3) selectively patterning the barrier film and the metal film by a photolithography process and an etch process, thus forming a metal wiring;
(b) forming a first interlayer insulating film on the semiconductor substrate in which the capacitor and the first resistor are formed;
(c) forming a plurality of first via plugs that are electrically connected to the capacitor and the resistor, and a first metal wiring that is electrically connected to the first via plugs, in the first interlayer insulating film;
(d) forming a second resistor on the first metal wiring; and
(e) forming a second interlayer insulating film on the semiconductor substrate in which the second resistor is formed, and then forming a plurality of second via plugs that are electrically connected to the first metal wiring and the second resistor, and a second metal wiring that is electrically connected to the second via plug.
2. The method as claimed in claim 1 , wherein the first and second resistors are electrically connected in a serial manner.
3. The method as claimed in claim 1 , wherein the metal film is an aluminum film, the barrier film is a titanium nitride film, the dielectric film is a silicon nitride film, the conductive material film is a tantalum nitride film, and the etch-stop layer is a silicon nitride film.
4. The method as claimed in claim 1 , wherein the second resistor has a structure in which an insulating film, a conductive material film and an etch-stop layer are sequentially stacked.