Embedded flash memory and write operation method thereof

1. An embedded flash memory, comprising:

a memory cell array comprising a plurality of memory cells;

an automatic verification controller comprising:

a TRIM calibration configured to provide a write voltage; and

a time controller configured to control a write time and a maximum write cycle, and

a high voltage generator configured to receive the write voltage from the TRIM calibration, and provide the write voltage to the memory cell array,

an input buffer configured to store input data;

a sense amplifier configured to read data from the memory cell array; and

a data comparator configured to compare the read data with the input data,

wherein in response to the read data not matching the input data, and in response to the maximum write cycle not being reached, a same write voltage is provided to the memory cell array for a same write time, and

in response to the maximum write cycle being reached, another same write voltage is provided to the memory cell array for the same write time for another maximum write cycle.

2. The embedded flash memory of claim 1 ,

wherein the write voltage comprises a minimum write voltage, a maximum write voltage and a write voltage interval.

3. The embedded flash memory of claim 1 ,

wherein the automatic verification controller is configured to provide a TRIM information to the high voltage generator, and

wherein the TRIM information comprises the write voltage.

4. The embedded flash memory of claim 1 , wherein each of the plurality of memory cells comprises:

a source region and a drain region which are disposed in a substrate;

a channel region disposed between the source region and the drain region;

a tunneling gate dielectric layer formed on the channel region;

a floating gate disposed on the tunneling gate dielectric layer; and

a control gate dielectric layer and a control gate disposed on the floating gate.

5. An embedded flash memory, comprising:

a memory cell array;

an automatic verification controller, configured to control a write voltage for a write operation, and configured to control a write time and a maximum write cycle for the write operation;

a high voltage generator configured to receive the write voltage, and provide one or more of a program voltage, erase voltage, read voltage to memory cells of the memory cell array;

a sense amplifier configured to read data from the memory cell array;

an input buffer configured to receive input data, and

a comparator configured to compare the read data and the input data, generate a verification signal based on the comparing, and provide the verification signal to the automatic verification controller,

wherein subsequent write operations are performed based on the verification signal with a same write time and a same write voltage up to the maximum write cycle, and

after the maximum write cycle, performed based on another same write voltage and the same write time up to another maximum write cycle.

6. The embedded flash memory of claim 5 , wherein the write operation comprises one or more of a data erase operation and a data programming operation.

7. The embedded flash memory of claim 5 , wherein the verification signal comprises a “pass” signal, which indicates that the input data and the read data are the same, and a “fail” signal, which indicates that the input data and the read data are not the same.

8. The embedded flash memory of claim 7 , wherein the write operation is terminated when the “pass” signal is generated.