Capacitor structure
View Patent ↗A capacitor structure includes: a first electrode configured to include a plurality of openings; a second electrode formed in each center of the openings; and a dielectric layer formed to surround the second electrode and fill the openings of the first electrode.
1. A capacitor structure, comprising:
a first electrode configured to include a plurality of openings;
a second electrode formed in each center of the openings; and
a dielectric layer formed to surround the second electrode and fill the openings of the first electrode,
wherein the first and second electrode comprise a plurality of first layers and second layers, respectively.
2. The capacitor structure of claim 1 , wherein the second electrode is apart from the first electrode with a distance ranging from approximately 0.1 μm to approximately 1 μm.
3. The capacitor structure of claim 1 , wherein the opening of first electrode has a polygon shape.
4. The capacitor structure of claim 1 , wherein the opening of first electrode has a shape of a circle, a semicircle or an oval.
5. The capacitor structure of claim 1 , wherein each first layer comprises a continuous flat-type structure.
6. The capacitor structure of claim 5 , wherein the flat-type structure includes a plurality of pillars inside to form a lattice strip type.
7. The capacitor structure of claim 1 , wherein each first layer comprises at least one opening and vertically coupled to each other through a plurality of first vias.
8. The capacitor structure of claim 1 , wherein each second layer is vertically coupled to each other through a plurality of second vias.
9. A capacitor structure, comprising:
a first electrode configured to include a plurality of first layers, each first layer having at least one opening and vertically coupled to each other through a plurality of first vias;
a plurality of second electrodes configured to include a plurality of second layers corresponding to the first layers, each second layer vertically coupled to each other through a plurality of second vias and formed in the opening of the first electrode; and
a dielectric layer formed between the first electrode and the second electrode to surround the second electrode and fill the openings of the first electrode.
10. The capacitor structure of claim 9 , wherein the first vias are disposed between corresponding ones of the first layers to have substantially the same shape as the first layers, and the second vias are disposed between corresponding ones of the second layers to have substantially the same shape as the second layers.
11. The capacitor structure of claim 9 , wherein the first layers of the first electrode are formed with a flat-type structure including a plurality of pillars inside to form a lattice strip type.
12. The capacitor structure of claim 9 , wherein the second electrode includes a bar-type structure.
13. The capacitor structure of claim 9 , wherein the second layers of the second electrode are coupled to each other through additional metal interconnections.
14. The capacitor structure of claim 9 , wherein the second electrode is apart from the first electrode with a distance ranging from approximately 0.1 μm to approximately 1 μm.
15. The capacitor structure of claim 9 , wherein the second electrode is disposed at every opening of the first electrode.
16. The capacitor structure of claim 9 , wherein the opening of first electrode has a polygon shape.
17. The capacitor structure of claim 9 , wherein the opening of first electrode has a shape of a circle, a semicircle or an oval.
18. The capacitor structure of claim 9 , wherein the first vias have a width substantially equal to or narrower than that of the first electrode.
19. The capacitor structure of claim 9 , wherein the second vias have a width substantially equal to or narrower than that of the second electrode.
20. The capacitor structure of claim 9 , wherein the openings of the first electrode are aligned in a vertical direction.