IP Library › Granted Patent US 12,720,850
Granted Patent B2
US 12,720,850 · App. 18/302,358 · Granted Aug 25, 2026

High voltage semiconductor device having Schottky barrier diode

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Quick Facts
Patent No.
US 12,720,850
App. No.
18/302,358
Granted
Aug 25, 2026
Kind
B2
Assignments (2)
CHANGE OF NAME Recorded Mar 12, 2024
From: KEY FOUNDRY CO., LTD.
To: SK KEYFOUNDRY INC.
Reel/Frame 066794/0290 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 18, 2023
From: LEE, TAE HOON
To: KEY FOUNDRY CO., LTD.
Reel/Frame 063359/0818 →
Priority Claims (1)
KR 10-2022-0120559 · Sep 23, 2022 · national
Continuity (1)
Related Publication 20240105838A1 · Mar 28, 2024
References Cited (10)
US 7906386B2 · Pang · 2011 [cited by applicant]
US 9196723B1 · Chen · 2015 [cited by examiner]
US 20220157982A1 · Chiu et al. · 2022 [cited by applicant]
CN 115020497A · 2022 [cited by examiner]
KR 1020060097808A · 2006 [cited by applicant]
KR 100853802B1 · 2008 [cited by applicant]
KR 1020130004707A · 2013 [cited by applicant]
KR 1020200095640A · 2020 [cited by applicant]
KR 1020200134824A · 2020 [cited by applicant]
Korean Office Action Issued on Nov. 7, 2025, in Counterpart Korean Patent Application No. 10-2022-0120559 (8 Pages in English, 8 Pages in Korean). [cited by applicant]