Hall sensor with improved doping profile
View Patent ↗A Hall sensor with improved doping profile is disclosed. The Hall sensor includes a semiconductor substrate, a sensing region formed on the substrate, an isolation region formed on the sensing region, and a high concentration doping region formed on an upper portion of the sensing region.
1. A Hall sensor comprising:
a semiconductor substrate;
a sensing region formed on the substrate;
an isolation region formed on the sensing region; and
a high concentration doping region formed on an upper portion of the sensing region,
wherein a maximum doping concentration region is formed at a predetermined depth with respect to the substrate surface and the maximum doping concentration region is under the high concentration doping region.
2. The Hall sensor of claim 1 , wherein the predetermined depth is 0.7˜2 μm from a surface of the substrate.
3. The Hall sensor of claim 1 , wherein the maximum doping concentration region is under the isolation region.
4. The Hall sensor of claim 1 , wherein the maximum doping concentration region is in the sensing region.
5. The Hall sensor of claim 1 , wherein a doping profile of the sensing region is parabolic in shape.
6. The Hall sensor of claim 1 , wherein a maximum doping concentration of the sensing region is from 1E15 atom/cm 3 to 1E17 atom/cm 3 .
7. A Hall sensor comprising:
a semiconductor substrate;
a sensing region formed on the substrate;
an isolation region formed on the sensing region; and
a first high concentration doping region formed on a first portion of the sensing region; and,
a second high concentration doping region formed on a second portion of the sensing region.
8. The Hall sensor of claim 7 , wherein:
a reference plane is located at a region of maximum doping concentration in the sensing region; and
a gradient of a first doping profile under the reference plane is steeper than a gradient of a second doping profile above the reference plane.
9. The Hall sensor of claim 7 , further comprising:
a maximum doping concentration location in the sensing region as a reference plane,
a first doping concentration section with doping concentration of the sensing region under the reference plane; and
a second doping concentration section with doping concentration of the sensing region above the reference plane,
wherein the second doping concentration section is larger than the first doping concentration section.
10. The Hall sensor of claim 9 , wherein a sum of doping concentration of the first doping concentration section and a sum of doping concentration of the second doping concentration section are different.
11. The Hall sensor of claim 7 , wherein the first high concentration doping region has a different conductivity type from that of the second high concentration doping region.
12. A Hall sensor comprising:
a semiconductor substrate;
a sensing region formed on the substrate;
a first high concentration doping region formed on a portion of the sensing region;
a second high concentration doping region formed on an upper portion of the sensing region
an isolation region formed on the sensing region, the isolation region being in contact with the first high concentration doping region; and
wherein a maximum doping concentration region is formed in the sensing region under the second high concentration doping region.
13. The Hall sensor of claim 12 , wherein a depth of the sensing region is 3˜4 μm.
14. The Hall sensor of claim 12 , wherein the maximum doping concentration region is formed in the sensing region at a depth greater than a depth of the isolation region.
15. The Hall sensor of claim 12 , wherein the sensing region has an opposite conductivity type to the semiconductor substrate.