Method for fabricating module of semiconductor chip

1. A method for fabricating a module of a semiconductor chip, comprising:

forming a bump on a substrate provided with a pad;

forming a photoresist protection layer over the bump;

performing a grinding process on a rear surface of the substrate to reduce a thickness of the substrate; and

exposing the bump by removing the protection layer.

2. The method of claim 1 , further comprising an adhesion layer formed between the pad and the bump to strengthen the adhesive strength between the pad and the bump.

3. The method of claim 1 , wherein the bump is formed by employing one of an electroplating method and an electroless nickel (Ni) plating method.

4. The method of claim 2 , wherein the bump is formed by employing one of an electroplating method and an electroless nickel (Ni) plating method.

5. The method of claim 3 , wherein if the electroplating method is employed, a seed layer is formed below the bump.

6. The method of claim 5 , wherein the seed layer is formed by employing gold (Au).

7. The method of claim 4 , wherein if the electroplating method is employed, a seed layer is formed below the bump.

8. The method of claim 7 , wherein the seed layer is formed by employing gold (Au).

9. The method of claim 2 , wherein the adhesion layer is formed by employing an under bump metallurgy (UBM) layer through a sputtering method.

10. The method of claim 9 , wherein the UBM layer includes titanium (Ti), titanium tungsten (TiW) and gold (Au).

11. The method of claim 1 , wherein the protection layer is removed by etching solutions including an iodine-based solution and hydrogen peroxide (H 2 O 2 ).

12. The method of claim 1 , wherein the semiconductor chip is an image sensor.