IP Library Granted Patent US 11,616,571
Granted Patent B2
US 11,616,571 · App. 17/526,331 · Granted Mar 28, 2023

Methods, devices, and systems for integration, beam forming and steering of ultra-wideband, wireless optical communication devices and systems

Inventors: Mohammad Ali Khatibzadeh (Cary, NC); Arunesh Goswami (Raleigh, NC); Morteza Abbasi (Raleigh, NC)
Assignee: Lumeova, Inc.
H04B10/112H04B10/1123H04B10/29H04B10/2914H04B10/501H04B10/502H04B10/61H04B10/67H04B10/695G02B5/20G02B5/3025H04B2210/003
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Quick Facts
Patent No.
US 11,616,571
App. No.
17/526,331
Granted
Mar 28, 2023
Kind
B2
Abstract

Disclosed herein are methods, devices, and system for beam forming and beam steering within ultra-wideband, wireless optical communication devices and systems. According to one embodiment, a free space optical (FSO) communication apparatus is disclosed. The FSO communication apparatus includes a semiconductor optical device configured to have a transient response time of less than 500 picoseconds (ps), a lens, and a first band select filter.

Claims (48)

1. A free space optical (FSO) communication sub-assembly module comprising:

a semiconductor optical device including at least one of a first optical source and a first optical detector implemented on a first optical die, wherein:

the first optical die comprises a plurality of epitaxial layers; and

the plurality of epitaxial layers includes at least one of gallium arsenide (GaAs), aluminium gallium arsenide (AlGaAs), gallium nitride (GaN), aluminium gallium nitride (AlGaN), gallium antimonide (GaSb), and aluminium gallium antimonide (AlGaSb);

a first optical band select filter deposited on the semiconductor optical device; and

a second optical band select filter coupled with the FSO communication sub-assembly module and positioned distinct from the semiconductor optical device and the first optical band select filter; and

a plurality of solder ready interconnects electrically coupled with the semiconductor optical device.

2. The FSO communication sub-assembly module of claim 1 , wherein the first optical die is an optical detector.

3. The FSO communication sub-assembly module of claim 1 further comprising a lens coupled with the FSO communication sub-assembly module.

4. The FSO communication sub-assembly module of claim 1 , wherein:

the first optical die comprises a first surface configured for optical detection and a second surface that is opposite the first surface; and

at least one of the first surface and the second surface implements flip-chip bonding for connection to an electronics die.

5. The FSO communication sub-assembly module of claim 1 , wherein the semiconductor optical device comprises an array of optical detectors.

6. The FSO communication sub-assembly module of claim 1 , wherein the semiconductor optical device comprises an array of optical sources.

7. The FSO communication sub-assembly module of claim 1 , wherein the semiconductor optical device comprises:

an array of optical sources; and

an array of optical detectors.

8. The FSO communication sub-assembly module of claim 3 , wherein:

the second optical band select filter is positioned between the lens and the semiconductor optical device; and

the second optical band select filter is at least one of a single-layer band select filter and a multi-layer band select filter.

9. The FSO communication sub-assembly module of claim 3 , wherein:

the second optical band select filter is deposited on a surface of the lens facing away from the semiconductor optical device; and

the second optical band select filter is at least one of a single-layer band select filter and a multi-layer band select filter.

10. The FSO communication sub-assembly module of claim 3 , wherein:

the second optical band select filter filter is deposited on a surface of the lens facing towards the semiconductor optical device; and

the second optical band select filter is at least one of a single-layer band select filter and a multi-layer band select filter.

11. The FSO communication sub-assembly module of claim 1 , wherein the semiconductor optical device is implemented using a plurality of optical dies configured using flip-chip bonding to an electronics die.

12. The FSO communication sub-assembly module of claim 1 , wherein the FSO communication sub-assembly module is implemented within a mobile system.

13. The FSO communication sub-assembly module of claim 1 , wherein the FSO communication sub-assembly module is implemented within an access hub and the access hub provides at least a portion of a wireless optical local area network.

14. The FSO communication sub-assembly module of claim 13 , wherein:

the access hub is configured to communicate optically with a plurality of devices; and

the FSO communication sub-assembly module is configured to provide a plurality of optical wavelengths.

15. The FSO communication sub-assembly module of claim 1 , wherein the FSO communication sub-assembly module is implemented within a wireless optical transceiver.

16. The FSO communication sub-assembly module of claim 1 , wherein the semiconductor optical device is a non-coherent optical source.

17. The FSO communication sub-assembly module of claim 16 , wherein the non-coherent optical source is a light emitting diode (LED).

18. The FSO communication sub-assembly module of claim 1 , wherein the semiconductor optical device is a coherent optical source.

19. The FSO communication sub-assembly module of claim 18 , wherein the coherent optical source is a laser diode.

20. A free space optical (FSO) communication apparatus comprising:

a lens;

a first band select filter;

a second band select filter; and

a semiconductor optical device including at least one of a first optical source and a first optical detector implemented on a first optical die, wherein:

the first optical die comprises a plurality of epitaxial layers; and

the plurality of epitaxial layers includes at least one of gallium arsenide (GaAs), aluminium gallium arsenide (AlGaAs), gallium nitride (GaN), aluminium gallium nitride (AlGaN), gallium antimonide (GaSb), and aluminium gallium antimonide (AlGaSb);

the first band select filter is deposited on a first surface of the lens facing towards the semiconductor optical device;

the first band select filter is at least one of a single-layer band select filter and a multi-layer band select filter;

the second band select filter is deposited on a second surface of the lens facing away from the semiconductor optical device; and

the second band select filter is at least one of a single-layer band select filter and a multi-layer band select filter.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 15, 2021
From: KHATIBZADEH, MOHAMMAD ALI; GOSWAMI, ARUNESH; ABBASI, MORTEZA
To: LUMEOVA, INC.
Reel/Frame 058137/0001 →
Continuity (4)
Continuation 16916510 · Jun 30, 2020
Continuation PCTUS2019018411 · Feb 18, 2019
Provisional Application 62634958 · Feb 26, 2018
Related Publication 20220077928A1 · Mar 10, 2022
Cited By (2)
US 12,413,307 US 12,531,636